Monte Carlo simulation of the operational quantities at the realistic mixed neutron-photon radiation fields CANEL and SIGMA

2006 ◽  
Vol 125 (1-4) ◽  
pp. 185-188 ◽  
Author(s):  
V. Lacoste ◽  
V. Gressier
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Photon Radiation ◽  
Radiation Fields ◽  
Operational Quantities

scholarly journals Conversion coefficients from fluence and air kerma to personal dose equivalent for monoenergetic photons using analytical fit and Monte Carlo simulation

2020 ◽  
Vol 26 (1) ◽  
pp. 31-44
Author(s):  
Hassan Al Kanti ◽  
O. El Hajjaji ◽  
T. El Bardouni
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Monte Carlo Methods ◽  
Analytical Approach ◽  
Absorbed Dose ◽  
Dose Equivalent ◽  
Air Kerma ◽  
Conversion Coefficients ◽  
New Equation ◽  
Operational Quantities

AbstractThe present study aims to calculate a new database of conversion coefficients from fluence and air Kerma to personal dose equivalent in two terms: absorbed dose and Kerma-approximations. In this work, we propose a new equation to perform an analytical fit of our Monte Carlo (MC) calculated conversion coefficients for photons for different angles. Also, we have calculated the conversion coefficients using the EGSnrc code. The conversion coefficients have been calculated for beams of monoenergetic photons from 0.015 to 10 MeV, incident on phantom ICRU for angles of incidence from 0° to a 75° in steps of 15°. Our computed values agree well when compared with those published for the ICRU 57 in Kerma-approximations with statistical uncertainties in the calculation around 2%. We can conclude from this work that the analytical approach is successful and powerful such as Monte Carlo methods to calculate the operational quantities.

scholarly journals Monte Carlo Simulation of a 6 MV X-Ray Beam for Open and Wedge Radiation Fields, Using GATE Code

2014 ◽  
Vol 4 (4) ◽  
pp. 267 ◽  
Author(s):  
Hamid Gholamhosseinian ◽  
Mohammad-Taghi Bahreyni-Toosi ◽  
Shahrokh Nasseri ◽  
Mahdi Momennezhad ◽  
Fatemeh Hasanabadi
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
X Ray ◽  
Radiation Fields

Electron Scattering in Solids

1990 ◽  
Vol 48 (2) ◽  
pp. 4-5
Author(s):  
Ryuichi Shimizu ◽  
Ze-Jun Ding
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Elastic Scattering ◽  
Electron Scattering ◽  
Cross Sections ◽  
Expansion Method ◽  
Electron Excitation ◽  
Partial Wave Expansion ◽  
Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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