Electron Spin Resonance Experiments on Donors in Silicon. II. Electron Spin Relaxation Effects

1959 ◽  
Vol 114 (5) ◽  
pp. 1245-1256 ◽  
Author(s):  
G. Feher ◽  
E. A. Gere
Keyword(s):  
Electron Spin Resonance ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Electron Spin Relaxation ◽  
Relaxation Effects ◽  
Spin Resonance

scholarly journals Electron spin resonance study of spin relaxation in the strong-leg spin ladder with nonmagnetic dilution

2019 ◽  
Vol 100 (14) ◽  
Author(s):  
Yu. V. Krasnikova ◽  
V. N. Glazkov ◽  
A. Ponomaryov ◽  
S. A. Zvyagin ◽  
K. Yu. Povarov ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Electron Spin Resonance Study ◽  
Spin Ladder ◽  
Spin Resonance ◽  
Spin Resonance Study

Dielektrische Relaxation und Elektronenspinrelaxation von Eisen(III)acetylacetonat in verdünnter Lösung/ Dielectric Relaxation and Electron Spin Relaxation of Ferric Acetylacetonate in Dilute Solutions

1976 ◽  
Vol 31 (5) ◽  
pp. 457-462
Author(s):  
W. Dietz ◽  
H. Kilp ◽  
W. Noerpel ◽  
M. Straßmann ◽  
M. Stockhausen
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Correlation Time ◽  
Wave Length ◽  
Dilute Solutions ◽  
Electron Spin Relaxation ◽  
Electron Spin Resonance Linewidth ◽  
Spin Resonance ◽  
Solvent Molecules ◽  
Permittivity Measurements

Abstract The dielectric loss and electron spin resonance linewidth of ferric acetylacetonate have been measured in dilute solutions of benzene, m-and p-xylene, mesitylene and carbon tetrachloride. Permittivity measurements were made at 10 frequencies in the microwave region (1.2 m to 1 mm wave-length), ESR measurement at 2 frequencies (X and Q band). The permittivity results show a broad non-Debye pattern, yielding a mean correlation time of about 4 ps. The ESR results yield a mean correlation time of about 3 ps. The parallelism between the results obtained by both methods is discussed in view of a common relaxation process, which is the transient deformation of the chelate system resulting from stochastic induction by neighbouring solvent molecules.

The Impurity Spin-Dependent Scattering Effects in the Transport and Spin Resonance of Conduction Electrons in Bismuth Doped Silicon

2015 ◽  
Vol 242 ◽  
pp. 327-331 ◽  
Author(s):  
Andrey V. Soukhorukov ◽  
Davud V. Guseinov ◽  
Alexei V. Kudrin ◽  
Sergey A. Popkov ◽  
Alexandra P. Detochenko ◽  
...  
Keyword(s):  
Hall Effect ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Anomalous Hall Effect ◽  
Hall Resistance ◽  
Resonance Spectroscopy ◽  
Electron Spin Relaxation ◽  
Conduction Electrons ◽  
Spin Resonance ◽  
Hall Effect Measurements

Transport and spin relaxation characteristics of the conduction electrons in silicon samples doped with bismuth in the 1.1·1013- 7.7·1015cm-3concentration range were studied by the Hall and electron spin resonance spectroscopy. Hall effect measurements in the temperature range 10-80 K showed a deviation from the linear dependence of the Hall resistance in the magnetic field, which is a manifestation of the anomalous Hall effect. The magnetoresistance investigation shows that with current increasing magnetoresistance may change its sign from positive to negative, which is most clearly seen when the bismuth concentration goes up to 7.7·1015cm-3. The conduction electron spin relaxation rate dramatically increases in silicon samples with sufficiently low concentration of bismuth ~ 2·1014cm-3. All these results can be explained in terms of the concept of spin-dependent and spin flip scattering induced by heavy bismuth impurity centers.

scholarly journals Spin relaxation in inhomogeneous quantum dot arrays studied by electron spin resonance

2014 ◽  
Vol 89 (4) ◽  
Author(s):  
A. F. Zinovieva ◽  
N. P. Stepina ◽  
A. I. Nikiforov ◽  
A. V. Nenashev ◽  
A. V. Dvurechenskii ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Quantum Dot ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Spin Resonance ◽  
Inhomogeneous Quantum
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