Engineered heterostructures designed for electric control of magnetic properties, the so-called
magnetoelectric interfaces
, present a novel route towards using the spin degree of freedom in electronic devices. Here, we review how a subset of such interfaces, namely ferromagnet–ferroelectric heterostructures, display electronically mediated control of magnetism and, in particular, emphasis is placed on how these effects manifest themselves as detectable spin-dependent transport phenomena. Examples of these effects are given for a variety of material systems on the basis of ferroelectric oxides, manganese and ruthenium magnetic complex oxides and elemental ferromagnetic metals. Results from both theory and experiment are discussed.
Magnetoelectric interfaces and spin transport