nio films
Recently Published Documents


TOTAL DOCUMENTS

289
(FIVE YEARS 58)

H-INDEX

43
(FIVE YEARS 4)

2022 ◽  
Vol 124 ◽  
pp. 111959
Author(s):  
Xi Chen ◽  
Yingming Zhao ◽  
Wenjie Li ◽  
Lebin Wang ◽  
Junying Xue ◽  
...  

Author(s):  
Abdelbaki NID ◽  
Lilia ZIGHED ◽  
Yacine AOUN ◽  
Bedreddine MAAOUI

In this experimental work, pure nickel oxide and Al-doped NiO thin films have successfully been elaborated onto glass substrates by solar spray pyrolysis technique. The substrates were heated at around 450°C using a solar heater (furnace). The structural, optical and electrical properties of the elaborated Al-doped films have been studied at different atomic percentage ratios (0, 0.5, 1, 1.5 and 2 at. %). The results of Al-doped NiO films XRD patterns were, the formation of (NiO) phase under a cubic crystalline structure (polycrystalline) with a strong favored orientation along (111) plane were noticed at all sprayed films. When Al doping ratio reaches 1 at.%, an growth in crystallite size over 31.9 nm was obtained denoting the nano-structure of the product, which confirmed by SEM images. In addition, aluminum oxide Al2O3 was clearly observed at 1.5 at.% Al ratio. Otherwise, all thin films have a good optical transmission in the visible region of about 65%, the optical band gap energy decreased from 3.69 to 3.64 eV with increasing Al doping ratio. It is shown that the layer deposited with 0.5 at.% has less disorder with few defects. The investigation on electrical properties of elaborated thin films confirmed that the conductivity of NiO films was improved, after doping them with Al which affirms their p-type character of semiconductor. However, an addition of an excessive quantity of Al content causes the formation of Al2O3 which leads to a decrease in the conductivity. It is worth mentioning that the Al content of 0.5 at.% is the optimum ratio in terms of electrical conductivity and formation defect. Al-doped NiO can be used in various optoelectronic devices due to its good transparency and high electrical conductivity.


Author(s):  
Ming-Chen Li ◽  
Ming-Jiang Dai ◽  
Song-Sheng Lin ◽  
Sheng-Chi Chen ◽  
Jing Xu ◽  
...  

2021 ◽  
Author(s):  
Jiong Wang ◽  
Liang Ma ◽  
Xiangyi Wang ◽  
Xiaohan Wang ◽  
Junjie Yao ◽  
...  

Author(s):  
Jiong Wang ◽  
Liang Ma ◽  
Xiangyi Wang ◽  
Xiaohan Wang ◽  
Junjie Yao ◽  
...  

Author(s):  
Mohd. Shkir ◽  
Z.R. Khan ◽  
M.A. Sayed ◽  
Kamlesh V. Chandekar ◽  
Aslam Khan ◽  
...  

2021 ◽  
pp. 130296
Author(s):  
P.V. Karthik Yadav ◽  
B. Ajitha ◽  
V. Annapureddy ◽  
Y. Ashok Kumar Reddy ◽  
Adem Sreedhar
Keyword(s):  

2021 ◽  
Vol 127 (5) ◽  
Author(s):  
Parashurama Salunkhe ◽  
Muhammed Ali A.V ◽  
Dhananjaya Kekuda

AbstractIn this article, we report a detailed study on the influence of sputter power on physical properties of the NiO films grown by DC magnetron sputtering. Structural studies carried out by Grazing Incidence X-ray diffraction (XRD) reveals the polycrystalline nature of the films with FCC phase. The crystallographic orientation (111) plane followed by (200), (220), and (311) plane were evident from the XRD spectra. The average crystallites sizes were estimated from the spectra, and the values were compared using three different plots such as Scherrer, Williamson–Hall and size–strain plot. The surface morphology was carried out by atomic force microscopy. The deposited samples show semitransparent behavior in the visible region and the estimated band gap increased from 2.70 to 3.34 eV with an increase in sputter power. Furthermore, X-ray photoelectron spectroscopy (XPS) core-level Ni2p spectra were deconvoluted and the observed $${\text{Ni}}2{\text{p}}_{{{\text{3/2}}}}$$ Ni 2 p 3/2 , $${\text{Ni}}2{\text{p}}_{{1/2}}$$ Ni 2 p 1 / 2 domain along with their satellite’s peaks were analyzed. Most importantly, XPS quantification data and Raman spectra confirm the presence of both $${\rm{Ni}}^{2+}$$ Ni 2 + and $${\rm{Ni}}^{3+}$$ Ni 3 + states in the NiO films. The electrical properties carried at room temperature revealed that the resistivity of the film significantly increased and a mobility of ~ 84 $${\rm{cm}}^{2}{\rm{V}}^{-1}{s}^{-1}$$ cm 2 V - 1 s - 1 was obtained.


Sign in / Sign up

Export Citation Format

Share Document