Magnetoelectric interfaces and spin transport

Engineered heterostructures designed for electric control of magnetic properties, the so-called magnetoelectric interfaces , present a novel route towards using the spin degree of freedom in electronic devices. Here, we review how a subset of such interfaces, namely ferromagnet–ferroelectric heterostructures, display electronically mediated control of magnetism and, in particular, emphasis is placed on how these effects manifest themselves as detectable spin-dependent transport phenomena. Examples of these effects are given for a variety of material systems on the basis of ferroelectric oxides, manganese and ruthenium magnetic complex oxides and elemental ferromagnetic metals. Results from both theory and experiment are discussed.

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Spin transport in epitaxial Fe3O4/GaAs lateral structured device

Chinese Physics B ◽

10.1088/1674-1056/ac4903 ◽

2022 ◽

Author(s):

Zhaocong Huang ◽

Wenqing Liu ◽

Jian Liang ◽

Qingjie Guo ◽

Ya Zhai ◽

...

Keyword(s):

Data Storage ◽

Field Effect ◽

Room Temperature ◽

Field Effect Transistor ◽

Spin Transport ◽

Spintronic Devices ◽

Spin Dependent Transport ◽

Effect Transistor ◽

Dependent Transport ◽

Further Development

Abstract Research in the spintronics community has been intensively stimulated by the proposal of the spin field-effect transistor (SFET), which has the potential for combining the data storage and process in a single device. Here we report the spin dependent transport on a Fe3O4/GaAs based lateral structured device. Parallel and antiparallel states of two Fe3O4 electrodes are achieved. A clear MR loop shows the perfect butterfly shape at room temperature, of which the intensity decreases with the reducing current, showing the strong bias-dependence. Understanding the spin dependent transport properties in this architecture has strong implication in further development of the spintronic devices for room-temperature SFET.

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Bias voltage-dependent low field spin transport properties of Fe3O4–PEG with different particle sizes

Modern Physics Letters B ◽

10.1142/s0217984916503012 ◽

2016 ◽

Vol 30 (23) ◽

pp. 1650301

Author(s):

Chunlong Xu ◽

Zhen Wang ◽

Lei Wang ◽

Gang Shi ◽

Zhaoyang Hou ◽

...

Keyword(s):

Transport Properties ◽

Bias Voltage ◽

Room Temperature ◽

Spin Transport ◽

Tunneling Effect ◽

Particle Sizes ◽

Low Field ◽

Spin Dependent Transport ◽

Voltage Dependent ◽

Dependent Transport

Spin-dependent transport properties of Fe3O4 spheres with diameters from 200 nm to 900 nm have been investigated and polyethylene glycol (PEG) exists on the surface of Fe3O4 particles. The nonlinear I–V curve became obvious with the increase of Fe3O4 diameter, which indicated the tunneling barrier height decreases with the increasing diameter. The magnetoresistance (MR) can reach −13% with an applied low field of 0.2 T at room temperature. With the diameter increase, the MR decreases and the required applied field increases. Moreover, the decrease of MR with the bias voltage increase can be attributed to the spin-dependent tunneling effect through the insulating surface layer of Fe3O4 and PEG.

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Electric Field Controlled Itinerant Carrier Spin Polarization in Ferromagnetic Semiconductors

Advances in Condensed Matter Physics ◽

10.1155/2021/6663876 ◽

2021 ◽

Vol 2021 ◽

pp. 1-5

Author(s):

Gezahegn Assefa

Keyword(s):

Electric Field ◽

Spin Polarization ◽

Diluted Magnetic Semiconductors ◽

Magnetic Semiconductors ◽

Ferromagnetic Semiconductors ◽

Ferromagnetic Metals ◽

Spin Dependent Transport ◽

Diluted Magnetic ◽

Dependent Transport ◽

Electrical Manipulation

Electric field control of magnetic properties has been achieved across a number of different material systems. In diluted magnetic semiconductors (DMSs), ferromagnetic metals, multiferroics, etc., electrical manipulation of magnetism has been observed. Here, we study the effect of an electric field on the carrier spin polarization in DMSs ( GaAsMn ); in particular, emphasis is given to spin-dependent transport phenomena. In our system, the interaction between the carriers and the localized spins in the presence of electric field is taken as the main interaction. Our results show that the electric field plays a major role on the spin polarization of carriers in the system. This is important for spintronics application.

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Spin transport properties of 1,4,5,8-naphthalenetetracarboxylic dianhydride based molecular devices

Physical Chemistry Chemical Physics ◽

10.1039/c9cp04572d ◽

2019 ◽

Vol 21 (44) ◽

pp. 24650-24658 ◽

Cited By ~ 1

Author(s):

Wenjing Wang ◽

Denglei Gao ◽

Yucheng Huang ◽

Tao Zhou ◽

Sufan Wang

Keyword(s):

Transport Properties ◽

Spin Transport ◽

Graphene Nanoribbon ◽

Molecular Devices ◽

Spin Dependent Transport ◽

Dependent Transport ◽

Carbon Based

NTCDA carbon based molecular devices have been designed, and spin-dependent transport properties via carbon and oxygen linkage to the zigzag graphene nanoribbon electrodes have been investigated.

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Strain Investigation on Spin-Dependent Transport Properties of γ-Graphyne Nanoribbon Between Gold Electrodes

Nanoscale Research Letters ◽

10.1186/s11671-020-03461-3 ◽

2021 ◽

Vol 16 (1) ◽

Author(s):

Yun Li ◽

Xiaobo Li ◽

Shidong Zhang ◽

Liemao Cao ◽

Fangping Ouyang ◽

...

Keyword(s):

Transport Properties ◽

High Performance ◽

Density Functional ◽

Strain Engineering ◽

Molecular Junctions ◽

Spin Splitting ◽

Functional Theory ◽

Spin Dependent Transport ◽

The Density Functional Theory ◽

Dependent Transport

AbstractStrain engineering has become one of the effective methods to tune the electronic structures of materials, which can be introduced into the molecular junction to induce some unique physical effects. The various γ-graphyne nanoribbons (γ-GYNRs) embedded between gold (Au) electrodes with strain controlling have been designed, involving the calculation of the spin-dependent transport properties by employing the density functional theory. Our calculated results exhibit that the presence of strain has a great effect on transport properties of molecular junctions, which can obviously enhance the coupling between the γ-GYNR and Au electrodes. We find that the current flowing through the strained nanojunction is larger than that of the unstrained one. What is more, the length and strained shape of the γ-GYNR serves as the important factors which affect the transport properties of molecular junctions. Simultaneously, the phenomenon of spin-splitting occurs after introducing strain into nanojunction, implying that strain engineering may be a new means to regulate the electron spin. Our work can provide theoretical basis for designing of high performance graphyne-based devices in the future.

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Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer

npj Computational Materials ◽

10.1038/s41524-021-00513-9 ◽

2021 ◽

Vol 7 (1) ◽

Author(s):

Yipeng An ◽

Kun Wang ◽

Shijing Gong ◽

Yusheng Hou ◽

Chunlan Ma ◽

...

Keyword(s):

Transport Properties ◽

Field Effect Transistors ◽

First Principles Calculations ◽

Next Generation ◽

Strong Response ◽

The Road ◽

Spin Dependent Transport ◽

2D Structure ◽

Filtering Effect ◽

Dependent Transport

AbstractTwo-dimensional (2D) magnetic materials are essential for the development of the next-generation spintronic technologies. Recently, layered van der Waals (vdW) compound MnBi2Te4 (MBT) has attracted great interest, and its 2D structure has been reported to host coexisting magnetism and topology. Here, we design several conceptual nanodevices based on MBT monolayer (MBT-ML) and reveal their spin-dependent transport properties by means of the first-principles calculations. The pn-junction diodes and sub-3-nm pin-junction field-effect transistors (FETs) show a strong rectifying effect and a spin filtering effect, with an ideality factor n close to 1 even at a reasonably high temperature. In addition, the pip- and nin-junction FETs give an interesting negative differential resistive (NDR) effect. The gate voltages can tune currents through these FETs in a large range. Furthermore, the MBT-ML has a strong response to light. Our results uncover the multifunctional nature of MBT-ML, pave the road for its applications in diverse next-generation semiconductor spin electric devices.

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