AbstractWe report the selected-area epitaxy of rare-earth iron garnet crystalline and amorphous straight ridge patterns, from 4μm to 8μm in width, deposited on Gd3Ga5O12 single crystal substrates. These samples were fabricated via a sputter epitaxial method on substrates that were partially etched by ion-beam bombardment. The strip pattern direction has given the considerable influence on the crystal-graphic formation of the sidewall of the grown ridge. The ridge shapes were similar to results that have been reported for the dissolution forms of garnet crystals in phosphoric acid and the facet of garnet crystals grown from flux. Furthermore, we have successfully grown both an epitaxial garnet film onto an amorphous film and an amorphous straight ridge with a triangular shape surrounded by crystal.
Magnetism and spin transport in rare-earth-rich epitaxial terbium and europium iron garnet films
