Spin Transport and Spin Conversion at Room Temperature in Exotic Materials Systems

2019 ◽  
Vol 139 (10) ◽  
pp. 668-673
Author(s):  
Masashi SHIRAISHI
Keyword(s):  
Room Temperature ◽  
Spin Transport ◽  
Spin Conversion

scholarly journals Coherent Spin Transport and Suppression of Spin Relaxation in InSb Nanowires with Single Subband Occupancy at Room Temperature

Small ◽  
2014 ◽  
pp. n/a-n/a ◽  
Author(s):  
Saumil Bandyopadhyay ◽  
Md. Iftekhar Hossain ◽  
Hasnain Ahmad ◽  
Jayasimha Atulasimha ◽  
Supriyo Bandyopadhyay
Keyword(s):  
Spin Relaxation ◽  
Room Temperature ◽  
Spin Transport ◽  
Insb Nanowires ◽  
Coherent Spin

scholarly journals Spin transport and spin conversion in compound semiconductor with non-negligible spin-orbit interaction

2015 ◽  
Vol 91 (2) ◽  
Author(s):  
Akiyori Yamamoto ◽  
Yuichiro Ando ◽  
Teruya Shinjo ◽  
Tetsuya Uemura ◽  
Masashi Shiraishi
Keyword(s):  
Spin Transport ◽  
Compound Semiconductor ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Conversion ◽  
Spin Orbit Interaction

Spin transport in epitaxial Fe3O4/GaAs lateral structured device

2022 ◽  
Author(s):  
Zhaocong Huang ◽  
Wenqing Liu ◽  
Jian Liang ◽  
Qingjie Guo ◽  
Ya Zhai ◽  
...  
Keyword(s):  
Data Storage ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Spin Transport ◽  
Spintronic Devices ◽  
Spin Dependent Transport ◽  
Effect Transistor ◽  
Dependent Transport ◽  
Further Development

Abstract Research in the spintronics community has been intensively stimulated by the proposal of the spin field-effect transistor (SFET), which has the potential for combining the data storage and process in a single device. Here we report the spin dependent transport on a Fe3O4/GaAs based lateral structured device. Parallel and antiparallel states of two Fe3O4 electrodes are achieved. A clear MR loop shows the perfect butterfly shape at room temperature, of which the intensity decreases with the reducing current, showing the strong bias-dependence. Understanding the spin dependent transport properties in this architecture has strong implication in further development of the spintronic devices for room-temperature SFET.

Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

2014 ◽  
Vol 104 (7) ◽  
pp. 072406 ◽  
Author(s):  
Nobuhide Yokota ◽  
Yohei Aoshima ◽  
Kazuhiro Ikeda ◽  
Hitoshi Kawaguchi
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Spin Transport

Spin Transport in Room-Temperature Germanium

Physics ◽  
2015 ◽  
Vol 8 ◽  
Author(s):  
Anonymous
Keyword(s):  
Room Temperature ◽  
Spin Transport

2D Mn2C6Se12 and Mn2C6S6Se6: Intrinsic Room-Temperature Dirac Spin Gapless Semiconductors and Perfect Spin Transport Properties

2020 ◽  
Vol 124 (29) ◽  
pp. 16127-16135 ◽  
Author(s):  
Xuming Wu ◽  
Yulin Feng ◽  
Si Li ◽  
Boqun Zhang ◽  
Guoying Gao
Keyword(s):  
Transport Properties ◽  
Room Temperature ◽  
Spin Transport ◽  
Spin Gapless Semiconductors ◽  
Dirac Spin

scholarly journals Spin transport in germanium at room temperature

2010 ◽  
Vol 97 (16) ◽  
pp. 162104 ◽  
Author(s):  
C. Shen ◽  
T. Trypiniotis ◽  
K. Y. Lee ◽  
S. N. Holmes ◽  
R. Mansell ◽  
...  
Keyword(s):  
Room Temperature ◽  
Spin Transport

scholarly journals Spin Transport in Nondegenerate Si with a Spin MOSFET Structure at Room Temperature

2014 ◽  
Vol 2 (3) ◽  
Author(s):  
Tomoyuki Sasaki ◽  
Yuichiro Ando ◽  
Makoto Kameno ◽  
Takayuki Tahara ◽  
Hayato Koike ◽  
...  
Keyword(s):  
Room Temperature ◽  
Spin Transport

scholarly journals Electronic spin transport and spin precession in single graphene layers at room temperature

Nature ◽  
2007 ◽  
Vol 448 (7153) ◽  
pp. 571-574 ◽  
Author(s):  
Nikolaos Tombros ◽  
Csaba Jozsa ◽  
Mihaita Popinciuc ◽  
Harry T. Jonkman ◽  
Bart J. van Wees
Keyword(s):  
Room Temperature ◽  
Spin Transport ◽  
Spin Precession ◽  
Graphene Layers ◽  
Electronic Spin

Bias voltage-dependent low field spin transport properties of Fe3O4–PEG with different particle sizes

2016 ◽  
Vol 30 (23) ◽  
pp. 1650301
Author(s):  
Chunlong Xu ◽  
Zhen Wang ◽  
Lei Wang ◽  
Gang Shi ◽  
Zhaoyang Hou ◽  
...  
Keyword(s):  
Transport Properties ◽  
Bias Voltage ◽  
Room Temperature ◽  
Spin Transport ◽  
Tunneling Effect ◽  
Particle Sizes ◽  
Low Field ◽  
Spin Dependent Transport ◽  
Voltage Dependent ◽  
Dependent Transport

Spin-dependent transport properties of Fe3O4 spheres with diameters from 200 nm to 900 nm have been investigated and polyethylene glycol (PEG) exists on the surface of Fe3O4 particles. The nonlinear I–V curve became obvious with the increase of Fe3O4 diameter, which indicated the tunneling barrier height decreases with the increasing diameter. The magnetoresistance (MR) can reach −13% with an applied low field of 0.2 T at room temperature. With the diameter increase, the MR decreases and the required applied field increases. Moreover, the decrease of MR with the bias voltage increase can be attributed to the spin-dependent tunneling effect through the insulating surface layer of Fe3O4 and PEG.

Sign in / Sign up

Export Citation Format

Share Document