Electron channeling radiation experiments at very high electron bunch charges

2003 ◽  
Vol 68 (6) ◽  
Author(s):  
R. A. Carrigan ◽  
J. Freudenberger ◽  
S. Fritzler ◽  
H. Genz ◽  
A. Richter ◽  
...  
Keyword(s):  
Electron Bunch ◽  
High Electron ◽  
Electron Channeling ◽  
Channeling Radiation ◽  
Very High

Electron channeling radiation from diamonds with and without platelets

1985 ◽  
Vol 57 (5) ◽  
pp. 1661-1664 ◽  
Author(s):  
H. Park ◽  
J. O. Kephart ◽  
R. K. Klein ◽  
R. H. Pantell ◽  
B. L. Berman ◽  
...  
Keyword(s):  
Electron Channeling ◽  
Channeling Radiation

Partially planar BP3with high electron mobility as a phosphorene analog

2017 ◽  
Vol 5 (43) ◽  
pp. 11267-11274 ◽  
Author(s):  
Fazel Shojaei ◽  
Hong Seok Kang
Keyword(s):  
Electron Mobility ◽  
High Electron ◽  
Two Dimensional ◽  
High Electron Mobility ◽  
Stacking Pattern ◽  
Very High ◽  
Bilayer Formation

We propose a two-dimensional BP3crystal with a very high electron mobility of 4.6 × 104cm2V−1s−1. Bilayer formation, specifically stacking pattern AA, results in an even higher electron mobility of ∼3.7 × 105cm2V−1s−1, which is ∼2500 times larger than that of an α phosphorene bilayer.

scholarly journals Very high electron temperatures in the daytime F region at Sondrestrom

1984 ◽  
Vol 11 (9) ◽  
pp. 919-922 ◽  
Author(s):  
Wlodek Kofman ◽  
Vincent B. Wickwar
Keyword(s):  
High Electron ◽  
F Region ◽  
Very High

scholarly journals Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

2008 ◽  
Vol 93 (8) ◽  
pp. 082111 ◽  
Author(s):  
A. M. Dabiran ◽  
A. M. Wowchak ◽  
A. Osinsky ◽  
J. Xie ◽  
B. Hertog ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Channel Conductivity ◽  
Very High

Electron channeling radiation from diamond

1985 ◽  
Vol 31 (1) ◽  
pp. 68-92 ◽  
Author(s):  
R. K. Klein ◽  
J. O. Kephart ◽  
R. H. Pantell ◽  
H. Park ◽  
B. L. Berman ◽  
...  
Keyword(s):  
Electron Channeling ◽  
Channeling Radiation

A Comparison of (100) Hg1−x Cdx Te and Hg1−x ZnxTe Grown By Molecular Beam Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
R. D. Feldman ◽  
R. F. Austin ◽  
P. M. Bridenbaugh
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Near Infrared ◽  
Wave Length ◽  
High Electron ◽  
Mbe Growth ◽  
Suitable Material ◽  
Zn Content ◽  
Length Range ◽  
Very High

ABSTRACTFilms of HgCdTe with x < 0.6 and of HgZnTe with x < 0.26 have been grown by molecular beam epitaxy (MBE). Very high electron mobilities have been achieved for both materials in the small bandgap region. Hall mobilities at 77K reach 4.8 × 105 cm2 /V-s for Hg0 87 Zn0.13 Te, and 3.1 × 105 cm2/V-s for Hg0.87 Zn0.13 Te. HgCdTe growth was easily extended to the 1.5 – 3 μm wave length range. Attempts to extend HgZnTe to these bandgaps were unsuccessful due to defects that are induced by surface roughness in high Zn-content films. These results suggest that HgCdTe is the more suitable material for MBE growth for near infrared applications.

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