Partially planar BP3with high electron mobility as a phosphorene analog

We propose a two-dimensional BP3crystal with a very high electron mobility of 4.6 × 104cm2V−1s−1. Bilayer formation, specifically stacking pattern AA, results in an even higher electron mobility of ∼3.7 × 105cm2V−1s−1, which is ∼2500 times larger than that of an α phosphorene bilayer.

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Millimeter-wave photoresponse due to excitation of two-dimensional plasmons in InGaAs/InP high-electron-mobility transistors

Journal of Applied Physics ◽

10.1063/1.4813511 ◽

2013 ◽

Vol 114 (3) ◽

pp. 033105 ◽

Cited By ~ 6

Author(s):

N. Nader Esfahani ◽

R. E. Peale ◽

W. R. Buchwald ◽

C. J. Fredricksen ◽

J. R. Hendrickson ◽

...

Keyword(s):

Millimeter Wave ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Two Dimensional ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Extremely high electron mobility in isotopically-enriched 28Si two-dimensional electron gases grown by chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.4824729 ◽

2013 ◽

Vol 103 (16) ◽

pp. 162105 ◽

Cited By ~ 14

Author(s):

Jiun-Yun Li ◽

Chiao-Ti Huang ◽

Leonid P. Rokhinson ◽

James C. Sturm

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Electron Mobility ◽

Chemical Vapor ◽

High Electron ◽

Two Dimensional ◽

Dimensional Electron ◽

Electron Gases ◽

High Electron Mobility

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Two-dimensional hydrodynamic simulation of High Electron Mobility Transistors using a block iterative scheme in combination with full Newton method

10.1109/icsict.1995.503360 ◽

2002 ◽

Author(s):

T. Simlinger ◽

R. Deutschmann ◽

C. Fischer ◽

H. Kosina ◽

S. Selberherr

Keyword(s):

Newton Method ◽

Electron Mobility ◽

Iterative Scheme ◽

High Electron Mobility Transistors ◽

High Electron ◽

Two Dimensional ◽

Hydrodynamic Simulation ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Theoretical Study of InAlN/GaN High Electron Mobility Transistor (HEMT) with a Polarization-Graded AlGaN Back-Barrier Layer

Electronics ◽

10.3390/electronics8080885 ◽

2019 ◽

Vol 8 (8) ◽

pp. 885 ◽

Cited By ~ 1

Author(s):

Yan Gu ◽

Dongmei Chang ◽

Haiyan Sun ◽

Jicong Zhao ◽

Guofeng Yang ◽

...

Keyword(s):

Electron Mobility ◽

Theoretical Study ◽

Lattice Relaxation ◽

High Electron Mobility Transistor ◽

High Electron ◽

Two Dimensional ◽

Drift Diffusion ◽

High Electron Mobility ◽

Al Content ◽

Dimensional Electron Gas

An inserted novel polarization-graded AlGaN back barrier structure is designed to enhance performances of In0.17Al0.83N/GaN high electron mobility transistor (HEMT), which is investigated by the two-dimensional drift-diffusion simulations. The results indicate that carrier confinement of the graded AlGaN back-barrier HEMT is significantly improved due to the conduction band discontinuity of about 0.46 eV at interface of GaN/AlGaN heterojunction. Meanwhile, the two-dimensional electron gas (2DEG) concentration of parasitic electron channel can be reduced by a gradient Al composition that leads to the complete lattice relaxation without piezoelectric polarization, which is compared with the conventional Al0.1Ga0.9N back-barrier HEMT. Furthermore, compared to the conventional back-barrier HEMT with a fixed Al-content, a higher transconductance, a higher current and a better radio-frequency performance can be created by a graded AlGaN back barrier.

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