Free electron nonlinearities in heavily doped semiconductors plasmonics

Physical Review B ◽

10.1103/physrevb.103.115305 ◽

2021 ◽

Vol 103 (11) ◽

Author(s):

Federico De Luca ◽

Michele Ortolani ◽

Cristian Ciracì

Keyword(s):

Free Electron ◽

Doped Semiconductors ◽

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Very heavily doped semiconductors as a “nearly-free-electron-gas” system

Solid-State Electronics ◽

10.1016/0038-1101(85)90204-7 ◽

1985 ◽

Vol 28 (1-2) ◽

pp. 11-15 ◽

Author(s):

K.-F. Berggren ◽

B.E. Sernelius

Keyword(s):

Free Electron ◽

Electron Gas ◽

Doped Semiconductors ◽

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Percolation in Heavily Doped Semiconductors

Physical Review ◽

10.1103/physrev.183.773 ◽

1969 ◽

Vol 183 (3) ◽

pp. 773-776 ◽

Author(s):

D. F. Holcomb ◽

J. J. Rehr

Keyword(s):

Doped Semiconductors ◽

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Electroreflectance Spectra of Heavily Doped Semiconductors. Field Inhomogeneity in the Low-Field Limit

physica status solidi (b) ◽

10.1002/pssb.2220710131 ◽

1975 ◽

Vol 71 (1) ◽

pp. 315-321 ◽

Author(s):

J. Humlíček ◽

F. Lukeš

Keyword(s):

Field Inhomogeneity ◽

Field Limit ◽

Doped Semiconductors ◽

Low Field ◽

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Temperature-dependent screening and carrier-carrier scattering in heavily doped semiconductors

Physical Review B ◽

10.1103/physrevb.48.17121 ◽

1993 ◽

Vol 48 (23) ◽

pp. 17121-17127 ◽

Author(s):

Kjeld O. Jensen ◽

J. M. Rorison ◽

Alison B. Walker

Keyword(s):

Temperature Dependent ◽

Doped Semiconductors ◽

Carrier Scattering ◽

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Band tailing in heavily doped semiconductors. Scattering and impurity-concentration-fluctuation effects

Physical Review B ◽

10.1103/physrevb.23.1971 ◽

1981 ◽

Vol 23 (4) ◽

pp. 1971-1976 ◽

Author(s):

J. Serre ◽

A. Ghazali ◽

P. Leroux Hugon

Keyword(s):

Impurity Concentration ◽

Concentration Fluctuation ◽

Doped Semiconductors ◽

Heavily Doped ◽

Fluctuation Effects ◽

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Statistical Physics of Carriers in Heavily Doped Semiconductors

Heavily Doped Semiconductors ◽

10.1007/978-1-4684-8821-0_3 ◽

1969 ◽

pp. 37-76

Author(s):

Victor I. Fistul’

Keyword(s):

Statistical Physics ◽

Doped Semiconductors ◽

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Auger Recombination in Heavily Doped Semiconductors

physica status solidi (b) ◽

10.1002/pssb.2221580228 ◽

1990 ◽

Vol 158 (2) ◽

pp. 669-683 ◽

Author(s):

Doan Nhat Quang

Keyword(s):

Auger Recombination ◽

Doped Semiconductors ◽

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Metal-insulator transition in heavily doped semiconductors

Current Opinion in Solid State and Materials Science ◽

10.1016/s1359-0286(98)80059-4 ◽

1998 ◽

Vol 3 (1) ◽

pp. 5-15 ◽

Author(s):

Hibert v. Löhneysen

Keyword(s):

Insulator Transition ◽

Metal Insulator Transition ◽

Doped Semiconductors ◽

Metal Insulator ◽

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Analysis of plasmonic properties of heavily doped semiconductors using full band structure calculations

Journal of Applied Physics ◽

10.1063/1.4795339 ◽

2013 ◽

Vol 113 (11) ◽

pp. 114904 ◽

Author(s):

Jesper Jung ◽

Thomas G. Pedersen

Keyword(s):

Band Structure ◽

Doped Semiconductors ◽

Band Structure Calculations ◽

Full Band ◽

Heavily Doped ◽

Full Band Structure ◽

Structure Calculations

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Scattering of Electrons in Heavily Doped Semiconductors

Journal of the Physical Society of Japan ◽

10.1143/jpsj.42.1622 ◽

1977 ◽

Vol 42 (5) ◽

pp. 1622-1631 ◽

Author(s):

Tatsumi Kurosawa ◽

Makoto Matsui ◽

Wataru Sasaki

Keyword(s):

Doped Semiconductors ◽

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