Band tailing in heavily doped semiconductors. Scattering and impurity-concentration-fluctuation effects

1981 ◽  
Vol 23 (4) ◽  
pp. 1971-1976 ◽  
Author(s):  
J. Serre ◽  
A. Ghazali ◽  
P. Leroux Hugon
Keyword(s):  
Impurity Concentration ◽  
Concentration Fluctuation ◽  
Doped Semiconductors ◽  
Heavily Doped ◽  
Fluctuation Effects ◽  
Band Tailing

Influence of Impurity Band on Seebeck Coefficient in Heavily-Doped Si

2011 ◽  
Vol 222 ◽  
pp. 197-200 ◽  
Author(s):  
Faiz Salleh ◽  
Hiroya Ikeda
Keyword(s):  
Seebeck Coefficient ◽  
Impurity Concentration ◽  
Energy Shift ◽  
Impurity Band ◽  
Theoretical Models ◽  
Experimental Result ◽  
Band Formation ◽  
High Impurity ◽  
Heavily Doped ◽  
Band Tailing

We calculated the Seebeck coefficient of heavily-doped Si based on theoretical models of impurity-band formation, ionization-energy shift and conduction-band tailing. The impurity band was described by using two kinds of band-width definitions and it was found that the calculated Seebeck coefficient strongly depended on the impurity-band definition. In the high impurity-concentration region, the Seebeck coefficient decreased with increasing impurity concentration, and with a peak around 1×1019 cm-3. This result was qualitatively in good agreement with the experimental result, while there was quantitative disagreement between them.

scholarly journals Free electron nonlinearities in heavily doped semiconductors plasmonics

2021 ◽  
Vol 103 (11) ◽  
Author(s):  
Federico De Luca ◽  
Michele Ortolani ◽  
Cristian Ciracì
Keyword(s):  
Free Electron ◽  
Doped Semiconductors ◽  
Heavily Doped

Percolation in Heavily Doped Semiconductors

1969 ◽  
Vol 183 (3) ◽  
pp. 773-776 ◽  
Author(s):  
D. F. Holcomb ◽  
J. J. Rehr
Keyword(s):  
Doped Semiconductors ◽  
Heavily Doped

Temperature-dependent screening and carrier-carrier scattering in heavily doped semiconductors

1993 ◽  
Vol 48 (23) ◽  
pp. 17121-17127 ◽  
Author(s):  
Kjeld O. Jensen ◽  
J. M. Rorison ◽  
Alison B. Walker
Keyword(s):  
Temperature Dependent ◽  
Doped Semiconductors ◽  
Carrier Scattering ◽  
Heavily Doped

Scattering of Electrons in Heavily Doped Semiconductors

1977 ◽  
Vol 42 (5) ◽  
pp. 1622-1631 ◽  
Author(s):  
Tatsumi Kurosawa ◽  
Makoto Matsui ◽  
Wataru Sasaki
Keyword(s):  
Doped Semiconductors ◽  
Heavily Doped
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