scholarly journals Nonlinear intensity dependence of edge photocurrents in graphene induced by terahertz radiation

2021 ◽  
Vol 104 (15) ◽  
Author(s):  
S. Candussio ◽  
L. E. Golub ◽  
S. Bernreuter ◽  
T. Jötten ◽  
T. Rockinger ◽  
...  
2020 ◽  
Vol 92 (2) ◽  
pp. 20502
Author(s):  
Behrokh Beiranvand ◽  
Alexander S. Sobolev ◽  
Anton V. Kudryashov

We present a new concept of the thermoelectric structure that generates microwave and terahertz signals when illuminated by femtosecond optical pulses. The structure consists of a series array of capacitively coupled thermocouples. The array acts as a hybrid type microwave transmission line with anomalous dispersion and phase velocity higher than the velocity of light. This allows for adding up the responces from all the thermocouples in phase. The array is easily integrable with microstrip transmission lines. Dispersion curves obtained from both the lumped network scheme and numerical simulations are presented. The connection of the thermocouples is a composite right/left-handed transmission line, which can receive terahertz radiation from the transmission line ports. The radiation of the photon to the surface of the thermocouple structure causes a voltage difference with the bandwidth of terahertz. We examined a lossy composite right/left-handed transmission line to extract the circuit elements. The calculated properties of the design are extracted by employing commercial software package CST STUDIO SUITE.


1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.


2018 ◽  
Vol 13 (1) ◽  
pp. 13-24
Author(s):  
A. V. Arzhannikov ◽  
◽  
P. V Kalinin ◽  
E. S. Sandalov ◽  
S. L. Sinitsky ◽  
...  

2020 ◽  
Vol 13 (11) ◽  
pp. 112007
Author(s):  
Joel Edouard Nkeck ◽  
Xavier Ropagnol ◽  
Riad Nechache ◽  
François Blanchard

2008 ◽  
Vol 36 (Supplement) ◽  
pp. 130-131
Author(s):  
Kenji Ikushima

2019 ◽  
Vol 45 (3) ◽  
pp. 271-273 ◽  
Author(s):  
Yu. V. Gulyaev ◽  
S. G. Chigarev ◽  
A. I. Panas ◽  
E. A. Vilkov ◽  
N. A. Maksimov ◽  
...  
Keyword(s):  

Author(s):  
Mikhail Dzyubenko ◽  
Sergey Masalov ◽  
Yuriy Kamenev ◽  
Ivan Kolenov ◽  
Viktor Pelipenko ◽  
...  

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