A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

Donor–acceptor pair recombination in non-stoichiometric ZnO thin films

2010 ◽  
Vol 150 (7-8) ◽  
pp. 379-382 ◽  
Author(s):  
Christof P. Dietrich ◽  
Martin Lange ◽  
Gabriele Benndorf ◽  
Holger von Wenckstern ◽  
Marius Grundmann
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

CuIn1-xGaxSe2 Thin Films Prepared by Co-Evaporation Technique

2013 ◽  
Vol 827 ◽  
pp. 12-15
Author(s):  
Ya Fen Wu ◽  
Jiunn Chyi Lee
Keyword(s):  
Thin Films ◽  
Energy Levels ◽  
Luminescence Spectra ◽  
Photoluminescence Spectra ◽  
Acceptor Pair ◽  
Shallow Acceptor ◽  
Donor Acceptor ◽  
Evaporation Technique ◽  
Donor Acceptor Pair ◽  
Gallium Content

The optical properties of Cu-poor CuIn1-xGaxSe2 thin films with different gallium contents grown by co-evaporated technique were studied. Measurements of photoluminescence and photoreflectance were performed on the samples. The photoluminescence and photoreflectance emission peaks observed around 1.1 eV are attributed to donor-acceptor pair luminescence. These donor-acceptor pair emissions are considered to originate from relatively shallow acceptor and donor energy levels. With increasing gallium content, the emission peaks shift towards higher levels of photon energy, and the linewidths of the luminescence spectra for the samples become wider, which we attributes to the greater statistical disorder between indium and gallium. Moreover, the conversion efficiency of the CuIn1-xGaxSe2-based solar cells is obtained. The measured results coincide with the inference given by the photoluminescence spectra.

Photoluminescence in wurtzite GaN containing carbon

2005 ◽  
Vol 892 ◽  
Author(s):  
Michael A. Reshchikov ◽  
Random H. Patillo ◽  
Kathleen C. Travis
Keyword(s):  
Chemical Vapor ◽  
Growth Conditions ◽  
Shallow Donor ◽  
Clear Correlation ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Shallow Acceptor ◽  
Low Intensity ◽  
Sapphire Substrates ◽  
Donor Acceptor

AbstractWe studied photoluminescence (PL) from a set of GaN layers grown on sapphire substrates by metalorganic chemical vapor deposition with the concentration of carbon varied by the growth conditions. One of the remarkable features in these samples is the extremely low intensity of the shallow donor-acceptor pair band. Analysis of the PL data gives the shallow acceptor concentration of less than 1014 cm-3 in most of the C-doped GaN layers. This result shows that C does not form a shallow acceptor, CN, in appreciable concentrations in wurtzite GaN. As for the YL band, there is no clear correlation between its intensity and the degree of C-doping. The question of identification of the deep acceptor responsible for the YL band in undoped and C-doped GaN still remains to be solved.

PHOTOLUMINESCENCE STUDIES IN CuInxGa1-xSe2 FILMS PREPARED BY GRAPHITE BOX ANNEALING OF In/Ga/Cu/Se STACKED ELEMENTAL LAYERS

1999 ◽  
Vol 13 (05) ◽  
pp. 153-158
Author(s):  
S. N. KUNDU ◽  
S. CHAUDHURI ◽  
A. K. PAL
Keyword(s):  
Thermal Evaporation ◽  
Pair Formation ◽  
Acceptor Pair ◽  
Pl Spectra ◽  
Glass Substrates ◽  
Excitonic Transition ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Photoluminescence Studies

CuIn x Ga 1-x Se 2 films were synthesized by graphite box annealing of In/Ga/Cu/Se stacked elemental layers deposited by thermal evaporation onto sodalime glass substrates. Photoluminescence (PL) studies were carried out in near stoichiometric and copper-rich films with Ga/(In+Ga) ratios varying between 0.24–0.29. The PL spectra were dominated by peaks at ~1.19 eV and 0.87 eV with a shoulder at ~0.84 eV. There was also a peak around 1.3 eV which could be assigned to the absorption from the split-off band. The transitions at ~1.19 eV and 0.87 eV were due to excitonic transition and donor-acceptor pair formation respectively.

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