Semiempirical tight-binding band structures of wurtzite semiconductors: AlN, CdS, CdSe, ZnS, and ZnO

1983 ◽  
Vol 28 (2) ◽  
pp. 935-945 ◽  
Author(s):  
Akiko Kobayashi ◽  
Otto F. Sankey ◽  
Stephen M. Volz ◽  
John D. Dow
2020 ◽  
Vol 22 (35) ◽  
pp. 19659-19671 ◽  
Author(s):  
Prithvi Tipirneni ◽  
Vishal Jindal ◽  
Michael J. Janik ◽  
Scott T. Milner

Conjugated polymers possess a wide range of desirable properties including accessible band gaps, plasticity, tunability, mechanical flexibility and synthetic versatility, making them attractive as active materials in organic photovoltaics (OPVs).


2001 ◽  
Vol 13 (13) ◽  
pp. L271-L275 ◽  
Author(s):  
J X Cao ◽  
X H Yan ◽  
J W Ding ◽  
D L Wang

2003 ◽  
Vol 02 (01n02) ◽  
pp. 109-116
Author(s):  
Hiroyuki Takeda ◽  
Katsumi Yoshino

We theoretically evaluate the electronic band structures in carbon nanotubes with nanoscale periodic pores with a tight-binding approximation of π electrons, and demonstrate that band gaps of the carbon nanotubes with nanoscale periodic pores differ significantly from those of conventional carbon nanotubes. The band gaps of the carbon nanotubes with nanoscale periodic pores depend strongly on the size of pores and inter-pore distances. In some carbon nanotubes with nanoscale periodic pores, band gaps are constant as a function of their circumferences. In other ones, band gaps have the exact periodicity of three as a function of their circumferences. Those behaviors can be explained by taking properties of nanoscale periodic porous graphite into consideration. In some carbon nanotubes with relatively large nanoscale periodic pores, flat bands appear, which may cause singular properties about magnetism in one-dimensional porous carbon nanotubes.


1991 ◽  
Vol 220 ◽  
Author(s):  
P. J. Lin-Chung

ABSTRACTThis paper reports on a tight-binding calculation of the band structures of the Si-GaP superlattice (SL) systems with emphasis on the results of the band gap properties. This calculation finds that the SLs grown onto the [110] or [111] oriented substrate do not produce direct gap materials. On the other hand, some of the [001] oriented SLs become direct gap materials when either an interface (IF) state is created at the P and Si IF, or a confined state in the Si occurs with only Ga and Si atoms forming all the IF.


1991 ◽  
Vol 43 (6) ◽  
pp. 4732-4738 ◽  
Author(s):  
Y. Arakawa ◽  
T. Yamauchi ◽  
J. N. Schulman

Sign in / Sign up

Export Citation Format

Share Document