Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide IV
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Published By Springer Berlin Heidelberg

9783642848063, 9783642848049

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Effects of CH3Cl Gas on Heteroepitaxial Growth of β-SiC on Si(111) by Chemical Vapor Deposition

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide IV ◽

10.1007/978-3-642-84804-9_7 ◽

1992 ◽

pp. 60-65

Author(s):

K. Ikoma ◽

M. Yamanaka ◽

H. Yamaguchi ◽

Y. Shichi

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Heteroepitaxial Growth

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Graded-Gap and Quantum-Well Injection a-SiC:H p-i-n Light-Emitting Diodes

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide IV ◽

10.1007/978-3-642-84804-9_56 ◽

1992 ◽

pp. 381-386

Author(s):

Jyh-Wong Hong ◽

Tean-Sen Jen ◽

Sui-Liang Ning ◽

Nerng-Fu Shin ◽

Chun-Yen Chang

Keyword(s):

Quantum Well ◽

Light Emitting Diodes ◽

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Simulations of Ge and C Implantations to Form Si1-χGeχ BJT

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide IV ◽

10.1007/978-3-642-84804-9_54 ◽

1992 ◽

pp. 368-373

Author(s):

A. Gupta ◽

J. W. Waters ◽

M. M. Rahman ◽

C. Y. Yang

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High-Temperature Rectifiers, UV Photodiodes, and Blue LEDs in 6H-SiC

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide IV ◽

10.1007/978-3-642-84804-9_50 ◽

1992 ◽

pp. 344-351 ◽

Author(s):

J. A. Edmond ◽

H.-S. Kong ◽

C. H. Carter

Keyword(s):

High Temperature

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Electrical Characterization of PiN Diode Structures in 6H-SiC

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide IV ◽

10.1007/978-3-642-84804-9_49 ◽

1992 ◽

pp. 338-343 ◽

Author(s):

C. T. Gardner ◽

J. A. Cooper ◽

M. R. Melloch ◽

J. W. Palmour ◽

C. H. Carter

Keyword(s):

Electrical Characterization ◽

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A New Application of a-SiC Films for Realizing High Current Gain Si Heterojunction Bipolar Transistors

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide IV ◽

10.1007/978-3-642-84804-9_46 ◽

1992 ◽

pp. 322-325

Author(s):

K. Sasaki ◽

T. Miyajima ◽

S. Furukawa

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

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Impact of SiC on Power Devices

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide IV ◽

10.1007/978-3-642-84804-9_44 ◽

1992 ◽

pp. 305-313 ◽

Author(s):

B. J. Baliga

Keyword(s):

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Study of Optimum Condition for Microcrystalline SiC Film Formation by ECR Plasma CVD Method

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide IV ◽

10.1007/978-3-642-84804-9_41 ◽

1992 ◽

pp. 281-286 ◽

Author(s):

T. Miyajima ◽

K. Sasaki ◽

S. Furukawa

Keyword(s):

Optimum Condition ◽

Film Formation ◽

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Observation of Linear Electro-Optic Effect in Cubic Silicon Carbide

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide IV ◽

10.1007/978-3-642-84804-9_30 ◽

1992 ◽

pp. 206-209

Author(s):

X. Tang ◽

K. G. Irvine ◽

D. Zhang ◽

M. G. Spencer

Keyword(s):

Silicon Carbide ◽

Electro Optic ◽

Cubic Silicon Carbide

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Oxidation Studies for 6H-SiC

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide IV ◽

10.1007/978-3-642-84804-9_23 ◽

1992 ◽

pp. 163-169 ◽

Author(s):

C. S. Patuwathavithane ◽

J. B. Crofton ◽

J. R. Williams ◽

C. C. Tin ◽

Z. C. Feng ◽

...

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