Theory and feasibility of using low-energy electron diffraction to study specific-heat anomalies at surface phase transitions

1985 ◽  
Vol 32 (5) ◽  
pp. 2993-3002 ◽  
Author(s):  
N. C. Bartelt ◽  
T. L. Einstein ◽  
L. D. Roelofs
Keyword(s):  
Phase Transitions ◽  
Electron Diffraction ◽  
Specific Heat ◽  
Low Energy ◽  
Energy Electron ◽  
Surface Phase ◽  
Low Energy Electron Diffraction ◽  
Surface Phase Transitions ◽  
Low Energy Electron

Low Energy Electron Microscopy of Surface Processes on Clean Si(111) and Si (100)

1989 ◽  
Vol 159 ◽  
Author(s):  
E. Bauer ◽  
M. Mundschau ◽  
W. Swiech ◽  
W. Telieps
Keyword(s):  
Electron Microscopy ◽  
Phase Transitions ◽  
Crystal Growth ◽  
Surface Defects ◽  
Low Energy ◽  
Energy Electron ◽  
Surface Processes ◽  
Surface Phase ◽  
Surface Phase Transitions ◽  
Low Energy Electron

ABSTRACTLow energy electron microscopy (LEEM) is briefly introduced and its application to the study of surface defects, surface phase transitions on Si(111), crystal growth and sublimation on Si(100) is illustrated.

Structure of Epitaxial CoSi2 Films on Si(111) Studied with Low-Energy Electron Diffraction (LEED)

1998 ◽  
Vol 05 (01) ◽  
pp. 139-144 ◽  
Author(s):  
U. Starke ◽  
J. Schardt ◽  
W. Weiß ◽  
G. Rangelov ◽  
Th. Fauster ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Lattice Mismatch ◽  
Vertical Direction ◽  
Low Energy ◽  
Energy Electron ◽  
Surface Phase ◽  
Lateral Direction ◽  
Rich Phase ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron

Expitaxial films of CoSi 2 on Si(111) were investigated by low-energy electron diffraction. Films of approximately 12 Å thickness were prepared by simultaneous deposition of Co and Si and subsequent annealing. The films were found to crystallize in CaF 2 structure in (111) orientation. Two (1×1) phases of different stoichiometry exist. The surface phase that contains more Co is found to be a CoSi 2(111) bulklike structure terminated by a Si–Co–Si trilayer. The Si-rich phase is terminated by an additional nonrotated silicon bilayer with the lower silicon atoms bound to cobalt in the first CoSi 2 layer. Consequently, these cobalt atoms have an eightfold coordination. Due to the lattice mismatch the silicide films are expanded by 0.5% in the lateral direction and contracted by 1.4% in the vertical direction.

Low-Energy-Electron-Diffraction Structural Studies of (100) Cleavage Surfaces of In4Se3 Layered Crystals

2014 ◽  
Vol 59 (6) ◽  
pp. 612-621 ◽  
Author(s):  
P.V. Galiy ◽  
◽  
Ya.B. Losovyj ◽  
T.M. Nenchuk ◽  
I.R. Yarovets’ ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Low Energy ◽  
Energy Electron ◽  
Structural Studies ◽  
Low Energy Electron Diffraction ◽  
Layered Crystals ◽  
Low Energy Electron
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