Low Energy Electron Microscopy of Surface Processes on Clean Si(111) and Si (100)

1989 ◽  
Vol 159 ◽  
Author(s):  
E. Bauer ◽  
M. Mundschau ◽  
W. Swiech ◽  
W. Telieps
Keyword(s):  
Electron Microscopy ◽  
Phase Transitions ◽  
Crystal Growth ◽  
Surface Defects ◽  
Low Energy ◽  
Energy Electron ◽  
Surface Processes ◽  
Surface Phase ◽  
Surface Phase Transitions ◽  
Low Energy Electron

ABSTRACTLow energy electron microscopy (LEEM) is briefly introduced and its application to the study of surface defects, surface phase transitions on Si(111), crystal growth and sublimation on Si(100) is illustrated.

Low energy electron microscopy of surface processes

Vacuum ◽  
1990 ◽  
Vol 41 (1-3) ◽  
pp. 5-10 ◽  
Author(s):  
E Bauer ◽  
M Mundschau ◽  
W Swiech ◽  
W Telieps
Keyword(s):  
Electron Microscopy ◽  
Low Energy ◽  
Energy Electron ◽  
Surface Processes ◽  
Low Energy Electron

A New Low Energy Electron Microscope

1998 ◽  
Vol 05 (06) ◽  
pp. 1189-1197 ◽  
Author(s):  
R. M. Tromp ◽  
M. Mankos ◽  
M. C. Reuter ◽  
A. W. Ellis ◽  
M. Copel
Keyword(s):  
Electron Microscopy ◽  
Phase Transitions ◽  
Electron Microscope ◽  
Epitaxial Growth ◽  
Strain Relaxation ◽  
Low Energy ◽  
Energy Electron ◽  
Relaxation Phenomena ◽  
Low Energy Electron

Low energy electron microscopy (LEEM) has developed into one of the premier techniques for in situ studies of surface dynamical processes, such as epitaxial growth, phase transitions, chemisorption and strain relaxation phenomena. Over the last three years we have designed and constructed a new LEEM instrument, aimed at improved resolution, improved diffraction capabilities and greater ease of operation compared to present instruments.

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