Fermi-edge singularity in heavily doped GaAs multiple quantum wells

1989 ◽  
Vol 40 (17) ◽  
pp. 12017-12019 ◽  
Author(s):  
H. Kalt ◽  
K. Leo ◽  
R. Cingolani ◽  
K. Ploog
1994 ◽  
Vol 299 ◽  
Author(s):  
S. Jiang ◽  
L.J. Zhang ◽  
J.M. Zhang ◽  
S.C. Shen

AbstractThe photomodulated reflectivity (PR) spectroscopy of modulation-doped diluted magnetic semiconductor Cd0.72 Mn0.28 Te:In/CdTe multiple quantum wells has been measured at 20 K – 300 K. Several spectral features associated with intersubband transitions have been found. The feature associated with Fermi level is first reported in PR spectra of II–VI heterostructures. In addition, a abnormal transition intensity ratio of 22H to 11H caused by electron filled effect has been reported. The Photoluminescence(PL) spectra of the sample have also been measured at 10 K – 300 K. A strong enhancement of the photoluminescence intensity towards the electron Fermi energy, which is caused by multiple electron-hole scattering processes, is reported. The temperature dependence of the Fermiedge singularity has been measured and discussed. The mechanism of the Fermi-edge singularity can be explained by hole localization.


1997 ◽  
Vol 55 (12) ◽  
pp. R7391-R7393 ◽  
Author(s):  
G. Coli' ◽  
L. Calcagnile ◽  
P. V. Giugno ◽  
R. Cingolani ◽  
R. Rinaldi ◽  
...  

1996 ◽  
Vol 53 (4) ◽  
pp. R1701-R1704 ◽  
Author(s):  
I. A. Buyanova ◽  
W. M. Chen ◽  
A. Henry ◽  
W. -X. Ni ◽  
G. V. Hansson ◽  
...  

2011 ◽  
Vol 34 (7) ◽  
pp. 1645-1648
Author(s):  
K. Gopalakrishna Naik ◽  
K. S. R. K. Rao ◽  
T. Srinivasan ◽  
R. Muralidharan

1995 ◽  
Vol 35 (1-3) ◽  
pp. 325-329 ◽  
Author(s):  
J.I. Lee ◽  
H.-K. Na ◽  
K.-S. Lee ◽  
E.-H. Lee ◽  
H.G. Lee ◽  
...  

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