Quantum size effects on the exciton energy of CdS clusters

1990 ◽  
Vol 42 (11) ◽  
pp. 7253-7255 ◽  
Author(s):  
Ying Wang ◽  
Norman Herron
2002 ◽  
Vol 16 (27) ◽  
pp. 4093-4103 ◽  
Author(s):  
S. BASKOUTAS ◽  
M. RIETH ◽  
A. F. TERZIS ◽  
V. KAPAKLIS ◽  
C. POLITIS

Studying the quantum size effects on the exciton energy of two-dimensional CdS quantum dots in the single band effective mass approximation for both electron and hole, we use a finite confinement in the x–y plane and we assume also that the induced charge is spread along a very thin interface in the z-direction. Solving the Schrödinger equation with a new numerical method, which is called potential morphing method, we obtain the corresponding energy within the self-consistent Hartree scheme. Excellent agreement is obtained with the experimental values of exciton energies for various sizes of CdS quantum dots in the strong, medium and weak confinement limit.


1991 ◽  
Vol 16 (6) ◽  
pp. 623-638 ◽  
Author(s):  
P.A. Badoz ◽  
F. Arnaud d'Avitaya ◽  
E. Rosencher

1983 ◽  
Vol 44 (C10) ◽  
pp. C10-375-C10-378 ◽  
Author(s):  
P. Ahlqvist ◽  
P. de Andrés ◽  
R. Monreal ◽  
F. Flores

1968 ◽  
Vol 96 (9) ◽  
pp. 61-86 ◽  
Author(s):  
B.A. Tavger ◽  
V.Ya. Demikhovskii

1997 ◽  
Vol 229 (6) ◽  
pp. 401-405 ◽  
Author(s):  
A. Crépieux ◽  
C. Lacroix ◽  
N. Ryzhanova ◽  
A. Vedyayev

2006 ◽  
Vol 100 (11) ◽  
pp. 114905 ◽  
Author(s):  
M. Cattani ◽  
M. C. Salvadori ◽  
A. R. Vaz ◽  
F. S. Teixeira ◽  
I. G. Brown

1993 ◽  
Vol 97 (37) ◽  
pp. 9493-9498 ◽  
Author(s):  
Ladislav Kavan ◽  
Tiziana Stoto ◽  
Michael Graetzel ◽  
Donald Fitzmaurice ◽  
Valery Shklover

1992 ◽  
Vol 283 ◽  
Author(s):  
R. Tsu ◽  
L. Ioriatti ◽  
J. F. Harvey ◽  
H. Shen ◽  
R. A. Lux

ABSTRACTThe reduction of the dielectric constant due to quantum confinement is studied both experimentally and theoretically. Angle resolved ellipsometry measurements with Ar- and He-Ne-lasers give values for the index of refraction far below what can be accounted for from porosity alone. A modified Penn model to include quantum size effects has been used to calculate the reduction in the static dielectric constant (ε) with extreme confinement. Since the binding energy of shallow impurities depends inversely on ε2, the drastic decrease in the carrier concentration as a result of the decrease in ε leads to a self-limiting process for the electrochemical etching of porous silicon.


2006 ◽  
Vol 89 (18) ◽  
pp. 183109 ◽  
Author(s):  
Tie-Zhu Han ◽  
Guo-Cai Dong ◽  
Quan-Tong Shen ◽  
Yan-Feng Zhang ◽  
Jin-Feng Jia ◽  
...  

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