Localization effects, energy relaxation, and electron and hole dispersion in selectively dopedn-typeAlyGa1−yAs/InxGa1−xAs/GaAs quantum wells

1990 ◽  
Vol 42 (15) ◽  
pp. 9472-9479 ◽  
Author(s):  
L. V. Butov ◽  
V. D. Kulakovskii ◽  
T. G. Andersson ◽  
Z. G. Chen
Keyword(s):  
Quantum Wells ◽  
Energy Relaxation

Hot-electron energy relaxation rates in GaAs/GaAlAs quantum wells

1989 ◽  
Vol 4 (10) ◽  
pp. 852-857 ◽  
Author(s):  
N Balkan ◽  
B K Ridley ◽  
M Emeny ◽  
I Goodridge
Keyword(s):  
Quantum Wells ◽  
Electron Energy ◽  
Energy Relaxation ◽  
Hot Electron ◽  
Relaxation Rates

Effects of nonequilibrium phonons on the energy relaxation and recombination lifetime of photogenerated carriers in undoped GaAs quantum wells

1988 ◽  
Vol 37 (15) ◽  
pp. 8923-8931 ◽  
Author(s):  
Kai Shum ◽  
M. R. Junnarkar ◽  
H. S. Chao ◽  
R. R. Alfano ◽  
H. Morkoç
Keyword(s):  
Quantum Wells ◽  
Energy Relaxation ◽  
Recombination Lifetime ◽  
Undoped Gaas

Effects of acoustic anisotropy and screening on the energy relaxation of hot electrons in heterojunctions and quantum wells

2002 ◽  
Vol 65 (8) ◽  
Author(s):  
D. Lehmann ◽  
A. J. Kent ◽  
Cz. Jasiukiewicz ◽  
A. J. Cross ◽  
P. Hawker ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Energy Relaxation ◽  
Hot Electrons ◽  
Acoustic Anisotropy

Mechanism of energy relaxation in the system of Landau levels in quantum wells

JETP Letters ◽  
2015 ◽  
Vol 102 (10) ◽  
pp. 678-682 ◽  
Author(s):  
M. P. Telenkov ◽  
Yu. A. Mityagin ◽  
V. V. Agafonov ◽  
K. K. Nagaraja
Keyword(s):  
Quantum Wells ◽  
Energy Relaxation ◽  
Landau Levels

Tunneling Transfer and Energy Relaxation Rate of Photo-Excited Carriers in Coupled Quantum Wells

1997 ◽  
Vol 36 (Part 1, No. 6B) ◽  
pp. 4008-4012 ◽  
Author(s):  
Nobuhiko Sawaki ◽  
Noritaka Anzai ◽  
Tsutomu Murakami ◽  
Masahito Yamaguchi ◽  
Takeshi Ikeda ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Relaxation Rate ◽  
Energy Relaxation ◽  
Coupled Quantum Wells ◽  
Tunneling Transfer
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