Effects of acoustic anisotropy and screening on the energy relaxation of hot electrons in heterojunctions and quantum wells

2002 ◽  
Vol 65 (8) ◽  
Author(s):  
D. Lehmann ◽  
A. J. Kent ◽  
Cz. Jasiukiewicz ◽  
A. J. Cross ◽  
P. Hawker ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Energy Relaxation ◽  
Hot Electrons ◽  
Acoustic Anisotropy

Hot-electron energy relaxation rates in GaAs/GaAlAs quantum wells

1989 ◽  
Vol 4 (10) ◽  
pp. 852-857 ◽  
Author(s):  
N Balkan ◽  
B K Ridley ◽  
M Emeny ◽  
I Goodridge
Keyword(s):  
Quantum Wells ◽  
Electron Energy ◽  
Energy Relaxation ◽  
Hot Electron ◽  
Relaxation Rates

INFLUENCE OF NONLINEAR ELECTRON MOBILITY ON RESPONSE TIME IN PHOTOREFRACTIVE SEMICONDUCTOR QUANTUM WELLS

2012 ◽  
Vol 21 (04) ◽  
pp. 1250050 ◽  
Author(s):  
MAREK WICHTOWSKI ◽  
ANDRZEJ ZIOLKOWSKI ◽  
EWA WEINERT-RACZKA ◽  
BLAZEJ JABLONSKI ◽  
WOJCIECH KARWECKI
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Electron Mobility ◽  
Hot Electrons ◽  
Nonlinear Transport ◽  
Field Range ◽  
Fringe Contrast ◽  
Recording Time ◽  
Semiconductor Quantum Wells ◽  
Charge Field

Nonlinear transport of hot electrons in semi-insulating GaAs / AlGaAs quantum wells significantly affects their photorefractive properties. In case of two waves mixing, this influence consists, among others, in an increased shift of photorefractive grating relative to light intensity distribution. The influence of nonlinear transport on grating recording time is less examined experimentally and theoretically. This study compares numerical and analytical solutions describing grating dynamics in approximation of small fringe contrast. The influence of nonlinear electron mobility on space-charge field was examined depending on external electric field intensity and on the grating constant. It was found that in the electric field range below 20 kV/cm, the nonlinear transport of electrons does not shorten the grating generation time.

Localization effects, energy relaxation, and electron and hole dispersion in selectively dopedn-typeAlyGa1−yAs/InxGa1−xAs/GaAs quantum wells

1990 ◽  
Vol 42 (15) ◽  
pp. 9472-9479 ◽  
Author(s):  
L. V. Butov ◽  
V. D. Kulakovskii ◽  
T. G. Andersson ◽  
Z. G. Chen
Keyword(s):  
Quantum Wells ◽  
Energy Relaxation

Effects of nonequilibrium phonons on the energy relaxation and recombination lifetime of photogenerated carriers in undoped GaAs quantum wells

1988 ◽  
Vol 37 (15) ◽  
pp. 8923-8931 ◽  
Author(s):  
Kai Shum ◽  
M. R. Junnarkar ◽  
H. S. Chao ◽  
R. R. Alfano ◽  
H. Morkoç
Keyword(s):  
Quantum Wells ◽  
Energy Relaxation ◽  
Recombination Lifetime ◽  
Undoped Gaas
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