Characterization of effective masses in strained quantum-well laser structures

1994 ◽  
Vol 50 (20) ◽  
pp. 15401-15404 ◽  
Author(s):  
T. A. Ma ◽  
M. S. Wartak
1995 ◽  
Vol 88 (5) ◽  
pp. 949-952
Author(s):  
M.S. Wartak ◽  
T.M. Ma ◽  
Z.M. Li ◽  
T. Makino

2007 ◽  
Vol 31 ◽  
pp. 95-97
Author(s):  
B. Dong ◽  
W.J. Fan ◽  
Y.X. Dang

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.


1994 ◽  
Vol 64 (2) ◽  
pp. 158-160 ◽  
Author(s):  
Hidenao Tanaka ◽  
Jun‐ichi Shimada ◽  
Yoshio Suzuki

1998 ◽  
Vol 37 (Part 1, No. 5A) ◽  
pp. 2521-2523 ◽  
Author(s):  
Akinori Ubukata ◽  
Jie Dong ◽  
Hiroshi Masusaki ◽  
Takayuki Satoh ◽  
Koh Matsumoto

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