de Haas–van Alphen effect in a two-dimensional metal with Fermi energy near the van Hove singularity

2005 ◽  
Vol 72 (7) ◽  
Author(s):  
M. A. Itskovsky ◽  
T. Maniv
1988 ◽  
Vol 144 ◽  
Author(s):  
C. Colvard ◽  
N. Nouri ◽  
H. Lee ◽  
D. Ackley

ABSTRACTLow temperature photoluminescence was studied in a large number of pseudomorphic HEMT's having an InxGa1−xAs quantum well. The spectra show strong qualitative differences when the Fermi level is above or below the second conduction subband, and in the latter case they are power dependent. A slight enhancement is seen at the Fermi edge only when it lies close to the higher subband. Excellent agreement is found between the measured Fermi energy and the two-dimensional carrier density in the well.


An outline is given of the electrical properties expected in a disordered solid or fluid which shows a metal-insulator transition of Anderson type. This is one in which the Fermi energy of the electrons passes through a mobility edge separating extended states from states localized by disorder, as the composition or some other parameter is changed. Some of the experimental evidence for this kind of transition is described. In particular, a relatively detailed account is given of the two dimensional inversion layer system in which the relevant parameters may be varied in a single device by direct electrical means.


2007 ◽  
Vol 467 (1-2) ◽  
pp. 43-50 ◽  
Author(s):  
Chikako Sakai ◽  
Fumihiko Matsui ◽  
Nobuaki Takahashi ◽  
Sakura Nishino Takeda ◽  
Hiroshi Daimon

2008 ◽  
Vol 77 (8) ◽  
Author(s):  
Christian R. Ast ◽  
Daniela Pacilé ◽  
Luca Moreschini ◽  
Mihaela C. Falub ◽  
Marco Papagno ◽  
...  

1972 ◽  
Vol 41 (3) ◽  
pp. 261-262 ◽  
Author(s):  
A Couget ◽  
L Martin ◽  
F Pradal ◽  
R Nitsche

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