scholarly journals Finite-thickness effects in ground-state transitions of two-electron quantum dots

2007 ◽  
Vol 76 (19) ◽  
Author(s):  
R. G. Nazmitdinov ◽  
N. S. Simonović
Keyword(s):  
Quantum Dots ◽  
Ground State ◽  
Finite Thickness ◽  
State Transitions ◽  
Electron Quantum

Ground-state transition in few-electron quantum dots observed by magnetophotoluminescence

2003 ◽  
Vol 68 (7) ◽  
Author(s):  
Y. H. Zhang ◽  
A. S. Plaut ◽  
J. Weis ◽  
J. P. Harbison ◽  
L. T. Florez ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ground State ◽  
State Transition ◽  
Ground State Transition ◽  
Electron Quantum

scholarly journals Спектроскопия возбуждения фотолюминесценции массивов квантовых точек InAs/InGaAs/GaAs в температурном диапазоне 20-300 K

2020 ◽  
Vol 128 (1) ◽  
pp. 110
Author(s):  
Д.А. Рыбалко ◽  
А.М. Надточий ◽  
М.В. Максимов ◽  
А.Е. Жуков
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Ground State ◽  
Carrier Transport ◽  
State Energy ◽  
Energy Difference ◽  
State Transitions ◽  
Photoluminescence Excitation ◽  
Spectra Analysis ◽  
Detection Energy

Detailed photoluminescence and photoluminescence excitation (PLE) studying in temperature range 20-300 K with variation of detection energy of selforganized InAs/InGaAs/GaAs quantum dots is presented in this work. PLE spectra analysis allowed us to identify two types of peaks. First type associated with excited-ground state transitions with high probability. Second corresponds to transitions from excited states to the ground state which probability is small, but significantly increased due to the effective relaxation of carriers with LO phonons. We discovered, that the QD distinctive dependence of the energy difference between peaks spectral positions corresponding to the ground and excited states on the ground state energy (i.e., on the quantum dots size) deviates as the temperature rises to 140–160 K, at which charge carrier transport between QD is activated.

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