Band structure of core-shell semiconductor nanowires

2008 ◽  
Vol 78 (11) ◽  
Author(s):  
M.-E. Pistol ◽  
C. E. Pryor
Keyword(s):  
Band Structure ◽  
Semiconductor Nanowires ◽  
Core Shell

scholarly journals Electromagnetic field emitted by core–shell semiconductor nanowires driven by an alternating current

2021 ◽  
Vol 130 (3) ◽  
pp. 034301
Author(s):  
Miguel Urbaneja Torres ◽  
Kristjan Ottar Klausen ◽  
Anna Sitek ◽  
Sigurdur I. Erlingsson ◽  
Vidar Gudmundsson ◽  
...  
Keyword(s):  
Electromagnetic Field ◽  
Alternating Current ◽  
Semiconductor Nanowires ◽  
Core Shell

scholarly journals Free-Standing Si and Ge, and Ge/Si Core-Shell Semiconductor Nanowires

2012 ◽  
Vol 122 (2) ◽  
pp. 294-298 ◽  
Author(s):  
H. Peelaers ◽  
B. Partoens ◽  
F.M. Peeters
Keyword(s):  
Semiconductor Nanowires ◽  
Core Shell ◽  
Free Standing

Synthesis and Characterization of Colloidal Core-Shell Semiconductor Nanowires

2010 ◽  
Vol 2010 (27) ◽  
pp. 4325-4331 ◽  
Author(s):  
Zhen Li ◽  
Xuedan Ma ◽  
Qiao Sun ◽  
Zhe Wang ◽  
Jian Liu ◽  
...  
Keyword(s):  
Semiconductor Nanowires ◽  
Synthesis And Characterization ◽  
Core Shell

scholarly journals Band structure and end states in InAs/GaSb core-shell-shell nanowires

2020 ◽  
Vol 102 (19) ◽  
Author(s):  
Florinda Viñas Boström ◽  
Athanasios Tsintzis ◽  
Michael Hell ◽  
Martin Leijnse
Keyword(s):  
Band Structure ◽  
Core Shell ◽  
Shell Nanowires

scholarly journals Polar optical phonons in core–shell semiconductor nanowires

2014 ◽  
Vol 56 ◽  
pp. 151-159 ◽  
Author(s):  
Darío G. Santiago-Pérez ◽  
C. Trallero-Giner ◽  
R. Pérez-Álvarez ◽  
Leonor Chico
Keyword(s):  
Semiconductor Nanowires ◽  
Core Shell ◽  
Optical Phonons

Defect control and Si/Ge core-shell heterojunction formation on silicon nanowire surfaces formed using the top-down method

2021 ◽  
Author(s):  
Naoki Fukata ◽  
Wipakorn Jevasuwan ◽  
Yonglie Sun ◽  
Yoshimasa Sugimoto
Keyword(s):  
Surface Defects ◽  
Silicon Nanowire ◽  
Impurity Scattering ◽  
Surface Damage ◽  
Semiconductor Nanowires ◽  
Core Shell ◽  
Shell Formation ◽  
Top Down ◽  
Defect Control ◽  
Impurity Doping

Abstract Control of surface defects and impurity doping are important keys to realizing devices that use semiconductor nanowires (NWs). As a structure capable of suppressing impurity scattering, p-Si/i (intrinsic)-Ge core-shell NWs with radial heterojunctions inside the NWs were formed. When forming NWs using a top-down method, the positions of the NWs can be controlled, but their surface is damaged. When heat treatment for repairing surface damage is performed, the surface roughness of the NWs closely depends on the kind of atmospheric gas. Oxidation and chemical etching prior to shell formation removes the surface damaged layer on p-SiNWs and simultaneously achieves a reduction in the diameter of the NWs. Finally, hole gas accumulation, which is important for suppressing impurity scattering, can be observed in the i-Ge layers of p-Si/i-Ge core-shell NWs.

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