Defect control and Si/Ge core-shell heterojunction formation on silicon nanowire surfaces formed using the top-down method

Control of surface defects and impurity doping are important keys to realizing devices that use semiconductor nanowires (NWs). As a structure capable of suppressing impurity scattering, p-Si/i (intrinsic)-Ge core-shell NWs with radial heterojunctions inside the NWs were formed. When forming NWs using a top-down method, the positions of the NWs can be controlled, but their surface is damaged. When heat treatment for repairing surface damage is performed, the surface roughness of the NWs closely depends on the kind of atmospheric gas. Oxidation and chemical etching prior to shell formation removes the surface damaged layer on p-SiNWs and simultaneously achieves a reduction in the diameter of the NWs. Finally, hole gas accumulation, which is important for suppressing impurity scattering, can be observed in the i-Ge layers of p-Si/i-Ge core-shell NWs.

Implementation of Defect Management Principle in Maintenance Practice at Local Authority

The purpose of this project is to develop processes for defect control in Malaysian public buildings. As a result, two objectives were established to achieve the goal: the study of defect management principles and analysis of defect management principles implementation levels in public building maintenance practises. Three local governments in the state of Selangor were the subjects of case studies. Using a systematic interview process, three building maintenance personnel were interviewed. Overall, the findings of this study revealed that each case study utilised defect management principles in a distinctive method. Despite the management and technical constraints, they are nevertheless able to manage the fault effectively. Keywords: Building maintenance, defect management, public building, local authority eISSN: 2398-4287© 2021. The Authors. Published for AMER ABRA cE-Bs by e-International Publishing House, Ltd., UK. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/). Peer–review under responsibility of AMER (Association of Malaysian Environment-Behaviour Researchers), ABRA (Association of Behavioural Researchers on Asians/Africans/Arabians) and cE-Bs (Centre for Environment-Behaviour Studies), Faculty of Architecture, Planning & Surveying, Universiti Teknologi MARA, Malaysia. DOI: https://doi.org/10.21834/ebpj.v6iSI4.2919

Interfacial Interactions during Demolding in Nanoimprint Lithography

Nanoimprint lithography (NIL) is a useful technique for the fabrication of nano/micro-structured materials. This article reviews NIL in the field of demolding processes and is divided into four parts. The first part introduces the NIL technologies for pattern replication with polymer resists (e.g., thermal and UV-NIL). The second part reviews the process simulation during resist filling and demolding. The third and fourth parts discuss in detail the difficulties in demolding, particularly interfacial forces between mold (template) and resist, during NIL which limit its capability for practical commercial applications. The origins of large demolding forces (adhesion and friction forces), such as differences in the thermal expansion coefficients (CTEs) between the template and the imprinted resist, or volumetric shrinkage of the UV-curable polymer during curing, are also illustrated accordingly. The plausible solutions for easing interfacial interactions and optimizing demolding procedures, including exploring new resist materials, employing imprint mold surface modifications (e.g., ALD-assisted conformal layer covering imprint mold), and finetuning NIL process conditions, are presented. These approaches effectively reduce the interfacial demolding forces and thus lead to a lower defect rate of pattern transfer. The objective of this review is to provide insights to alleviate difficulties in demolding and to meet the stringent requirements regarding defect control for industrial manufacturing while at the same time maximizing the throughput of the nanoimprint technique.