scholarly journals Slope selection-driven Ostwald ripening in ZnO thin film growth

2012 ◽  
Vol 86 (4) ◽  
Author(s):  
A. González-González ◽  
C. Polop ◽  
E. Vasco
Keyword(s):  
Thin Film ◽  
Ostwald Ripening ◽  
Film Growth ◽  
Thin Film Growth ◽  
Zno Thin Film ◽  
Slope Selection

scholarly journals A stabilized second order exponential time differencing multistep method for thin film growth model without slope selection

2020 ◽  
Vol 54 (3) ◽  
pp. 727-750 ◽  
Author(s):  
Wenbin Chen ◽  
Weijia Li ◽  
Zhiwen Luo ◽  
Cheng Wang ◽  
Xiaoming Wang
Keyword(s):  
Thin Film ◽  
Growth Model ◽  
Film Growth ◽  
Multistep Method ◽  
Second Order ◽  
Thin Film Growth ◽  
Energy Stability ◽  
Exponential Time ◽  
Exponential Time Differencing ◽  
Slope Selection

In this paper, a stabilized second order in time accurate linear exponential time differencing (ETD) scheme for the no-slope-selection thin film growth model is presented. An artificial stabilizing term $ A{\tau }^2\frac{\mathrm{\partial }{\Delta }^2u}{\mathrm{\partial }t}$ is added to the physical model to achieve energy stability, with ETD-based multi-step approximations and Fourier collocation spectral method applied in the time integral and spatial discretization of the evolution equation, respectively. Long time energy stability and detailed 𝓁∞(0,T;𝓁2) error analysis are provided based on the energy method, with a careful estimate of the aliasing error. In addition, numerical experiments are presented to demonstrate the energy decay and convergence rate.

scholarly journals Co-dosing Ozone and Deionized Water as Oxidant Precursors of ZnO Thin Film Growth by Atomic Layer Deposition

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Yung-Chen Cheng ◽  
Hsiang-Chen Wang ◽  
Shih-Wei Feng ◽  
Tsai-Pei Li ◽  
Siu-Keung Fung ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Atomic Layer ◽  
Deionized Water ◽  
Thin Film Growth ◽  
Zno Thin Film ◽  
Layer Deposition

Optimization of pulsed laser deposited ZnO thin-film growth parameters for thin-film transistors (TFT) application

2012 ◽  
Vol 110 (4) ◽  
pp. 793-798 ◽  
Author(s):  
Manisha Gupta ◽  
Fatema Rezwana Chowdhury ◽  
Douglas Barlage ◽  
Ying Yin Tsui
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Film Growth ◽  
Growth Parameters ◽  
Pulsed Laser ◽  
Thin Film Growth ◽  
Zno Thin Film

scholarly journals Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBE

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Shao-Ying Ting ◽  
Po-Ju Chen ◽  
Hsiang-Chen Wang ◽  
Che-Hao Liao ◽  
Wen-Ming Chang ◽  
...  
Keyword(s):  
Thin Film ◽  
Buffer Layer ◽  
Film Growth ◽  
Lattice Mismatch ◽  
Deep Level ◽  
Thin Film Growth ◽  
Buffer Layers ◽  
Threading Dislocations ◽  
Zno Thin Film

The material and optical properties of ZnO thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the ZnO layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality ZnO thin film growth. A GaN buffer layer slightly increased the quality of the ZnO thin film, but the threading dislocations still stretched along thec-axis of the GaN layer. The use of MgO as the buffer layer decreased the surface roughness of the ZnO thin film by 58.8% due to the suppression of surface cracks through strain transfer of the sample. From deep level emission and rocking curve measurements it was found that the threading dislocations play a more important role than oxygen vacancies for high-quality ZnO thin film growth.

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