Anisotropic electronic band structure of intrinsic Si(110) studied by angle-resolved photoemission spectroscopy and first-principles calculations

2017 ◽  
Vol 96 (12) ◽  
Author(s):  
Stephane Yu Matsushita ◽  
Akari Takayama ◽  
Erina Kawamoto ◽  
Chunping Hu ◽  
Satoshi Hagiwara ◽  
...  
Keyword(s):  
Band Structure ◽  
First Principles ◽  
Electronic Band Structure ◽  
Photoemission Spectroscopy ◽  
First Principles Calculations ◽  
Electronic Band ◽  
Angle Resolved Photoemission Spectroscopy

First Principles Calculations of Electronic Band Structure and Optical Properties of Cr-Doped ZnO

2009 ◽  
Vol 113 (19) ◽  
pp. 8460-8464 ◽  
Author(s):  
Luyan Li ◽  
Weihua Wang ◽  
Hui Liu ◽  
Xindian Liu ◽  
Qinggong Song ◽  
...  
Keyword(s):  
Optical Properties ◽  
Band Structure ◽  
First Principles ◽  
Electronic Band Structure ◽  
First Principles Calculations ◽  
Electronic Band ◽  
Doped Zno

THE ELECTRONIC BAND STRUCTURE OF AlN, AlSb, AlAs AND THEIR TERNARY ALLOYS WITH In

2006 ◽  
Vol 20 (22) ◽  
pp. 3199-3221 ◽  
Author(s):  
REZEK MOHAMMAD ◽  
ŞENAY KATIRCIOĞLU
Keyword(s):  
Band Structure ◽  
First Principles ◽  
Nearest Neighbor ◽  
Electronic Band Structure ◽  
Ternary Alloys ◽  
First Principles Calculations ◽  
Electronic Band ◽  
Energy Parameters

The electronic band structure of AlN , AlSb , AlAs and their ternary alloys with In has been investigated by ETB. The ETB method has been formulated for sp3d2 basis and nearest neighbor interactions of the compounds and its energy parameters have been derived from the results of the present first principles calculations carried on AlN , AlSb and AlAs . It has been found that the present ETB energy parameters can produce the band structure of the compounds and their ternary alloys with In successfully.

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