Abstract
In this work, we study the Raman spectra of twisted bilayer graphene samples as a function of their twist-angles (θ), ranging from 0.03º to 3.40º, where local θ are determined by analysis of their associated moiré superlattices, as imaged by scanning microwave impedance microscopy. Three standard excitation laser lines are used (457, 532, and 633 nm wavelengths), and the main Raman active graphene bands (G and 2D) are considered. Our results reveal that electron-phonon interaction influences the G band's linewidth close to the magic angle regardless of laser excitation wavelength. Also, the 2D band lineshape in the θ < 1º regime is dictated by crystal lattice and depends on both the Bernal (AB and BA) stacking bilayer graphene and strain soliton regions (SP) [1]. We propose a geometrical model to explain the 2D lineshape variations, and from it, we estimate the SP width when moving towards the magic angle.
Possible correlated insulating states in magic-angle twisted bilayer graphene under strongly competing interactions
