Magnetic-Field-Induced Enhancement of Relativistic-Electron-Beam Energy Deposition

1977 ◽  
Vol 38 (25) ◽  
pp. 1483-1486 ◽  
Author(s):  
D. Mosher ◽  
I. B. Bernstein
Keyword(s):  
Magnetic Field ◽  
Electron Beam ◽  
Relativistic Electron ◽  
Beam Energy ◽  
Relativistic Electron Beam ◽  
Energy Deposition ◽  
Electron Beam Energy

scholarly journals Relativistic electron beam energy deposition in thin gold and aluminum targets

1979 ◽  
Author(s):  
E.J.T. Burns ◽  
S.A. Goldstein ◽  
J.A. Halbleib ◽  
L.P. Mix ◽  
J.N. Olsen ◽  
...  
Keyword(s):  
Electron Beam ◽  
Relativistic Electron ◽  
Beam Energy ◽  
Relativistic Electron Beam ◽  
Energy Deposition ◽  
Electron Beam Energy

scholarly journals Enhanced Relativistic-Electron-Beam Energy Loss in Warm Dense Aluminum

2015 ◽  
Vol 114 (9) ◽  
Author(s):  
X. Vaisseau ◽  
A. Debayle ◽  
J. J. Honrubia ◽  
S. Hulin ◽  
A. Morace ◽  
...  
Keyword(s):  
Electron Beam ◽  
Energy Loss ◽  
Relativistic Electron ◽  
Beam Energy ◽  
Relativistic Electron Beam ◽  
Electron Beam Energy

Arsenic Implant Activation and Redistribution in P-Type Silicon Induced by Pulsed Electron Beam Annealing

1982 ◽  
Vol 13 ◽  
Author(s):  
D. Barbierf ◽  
M. Baghdadi ◽  
A. Laugier ◽  
A. Cachard
Keyword(s):  
Electron Beam ◽  
Carrier Concentration ◽  
Beam Energy ◽  
Energy Deposition ◽  
Liquid Silicon ◽  
Electron Beam Energy ◽  
Pulsed Electron Beam ◽  
Highly Active ◽  
P Type ◽  
Fluence Range

ABSTRACTIn this work Pulsed Electron Beam Annealing has been used to Sctivaye As implanted in (100) and (111) silicon (140 keV- 1015 cm−2 ). With a selected electron beam energy deposition profile excellent regrowth layer quality and As activation has been obtained in the 1.2–1.4 J/cm2 fluence range. As redistribution is conistent with the melting model assuming a diffusivity of 10−4 cm2/s in liquid silicon. As losses might slightly reduce the carrier concentration near the surface in the case of (100) silicon. However a shallow and highly active N+ layer have been achieved with optimized PEBA conditions.

Fast-wave interaction with a relativistic electron beam

1974 ◽  
Vol 11 (2) ◽  
pp. 299-309 ◽  
Author(s):  
P. Sarangle
Keyword(s):  
Magnetic Field ◽  
Growth Rate ◽  
Electron Beam ◽  
Relativistic Electron ◽  
Microwave Radiation ◽  
Relativistic Electron Beam ◽  
Parametric Instability ◽  
Travelling Wave ◽  
Fast Wave ◽  
Coupled Modes

The excitation of a relativistic electron beam, by means of a fast waveguide structure, is examined. Here the beam is injected into a modified waveguide, and interacts with the modes of the guide in such a way as to transform some of its energy into microwave radiation. This microwave generation device, called the Ubitron, is based upon a fast-wave excitation of a magnetically modulated relativistic electron beam. The beam is modulated by injecting it into a small spatially periodic magnetic field region within the guide. Analysis of this interaction shows that the slow space charge beam mode couples actively to the fast transverse electric guide mode. The result is parametric instability of the coupled modes. Synchronism between the doppler-shifted transverse travelling wave and the undulating electron beam results in a transfer of energy from the beam to the transverse field. The parametrically growing field can be a source of microwave radiation. The period magnetic field, together with the beam density, provide the coupling media between the unstable waves. The growth rate of the instability is shown to depend, in a nonlinear manner, on the product of the beam plasma frequency and the strength of the applied rippled magnetic field. The growth rate is obtained as a function of the system parameters.

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