Unoccupied Surface State on Ag(110) as Revealed by Inverse Photoemission

1984 ◽  
Vol 52 (20) ◽  
pp. 1826-1829 ◽  
Author(s):  
B. Reihl ◽  
R. R. Schlittler ◽  
H. Neff
1985 ◽  
Vol 31 (8) ◽  
pp. 4745-4750 ◽  
Author(s):  
R. A. Bartynski ◽  
T. Gustafsson ◽  
Paul Soven

1984 ◽  
Vol 53 (18) ◽  
pp. 1777-1777 ◽  
Author(s):  
B. Reihl ◽  
R. R. Schlittler ◽  
H. Neff

1985 ◽  
Vol 152-153 ◽  
pp. 231-236 ◽  
Author(s):  
B. Reihl ◽  
R.R. Schlittler ◽  
H. Neff

1998 ◽  
Vol 05 (01) ◽  
pp. 193-197 ◽  
Author(s):  
I. Forbeaux ◽  
J.-M. Themlin ◽  
V. Langlais ◽  
L. M. Yu ◽  
H. Belkhir ◽  
...  

k//-resolved inverse-photoemission spectroscopy of the [Formula: see text] reconstruction of 6H–SiC(0001) reveals a sharp surface state U located 1.10±0.05 eV above the Fermi level at the center of the surface Brillouin zone with a total bandwidth of 0.34±0.05 eV. This value is in good agreement with recent LDA calculations which predict an adatom-induced surface state Σ1 which should be half-filled. In this model, the adatoms are Si atoms occupying the T 4 site above a compact SiC(0001) (Si) termination. In contrast to the predicted metallic behavior, the U state remains completely unoccupied throughout the whole Brillouin zone, and the surface is semiconducting. We propose that some charge transfer from the Si adatoms towards subsituted C atoms in the terminating bilayer stabilizes the reconstruction by moving up the Σ1 state away from the Fermi level.


1985 ◽  
Vol 152-153 ◽  
pp. A117
Author(s):  
B. Reihl ◽  
R.R. Schlittler ◽  
H. Neff

1986 ◽  
Vol 33 (10) ◽  
pp. 7326-7328 ◽  
Author(s):  
S. L. Hulbert ◽  
P. D. Johnson ◽  
R. F. Garrett

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