Intensity oscillations in the inverse photoemission cross section of an unoccupied surface state on Cu(001)

1986 ◽  
Vol 33 (10) ◽  
pp. 7326-7328 ◽  
Author(s):  
S. L. Hulbert ◽  
P. D. Johnson ◽  
R. F. Garrett
Keyword(s):  
Cross Section ◽  
Surface State ◽  
Inverse Photoemission

Resonances in the photoemission cross section of a surface state: Results for Ag(111)

1987 ◽  
Vol 35 (8) ◽  
pp. 3728-3733 ◽  
Author(s):  
T. C. Hsieh ◽  
P. John ◽  
T. Miller ◽  
T.-C. Chiang
Keyword(s):  
Cross Section ◽  
Surface State

Unoccupied Surface State on Ag(110) as Revealed by Inverse Photoemission

1984 ◽  
Vol 52 (20) ◽  
pp. 1826-1829 ◽  
Author(s):  
B. Reihl ◽  
R. R. Schlittler ◽  
H. Neff
Keyword(s):  
Surface State ◽  
Inverse Photoemission

Observation of an unoccupied surface state on Cu(110) by inverse photoemission

1985 ◽  
Vol 31 (8) ◽  
pp. 4745-4750 ◽  
Author(s):  
R. A. Bartynski ◽  
T. Gustafsson ◽  
Paul Soven
Keyword(s):  
Surface State ◽  
Inverse Photoemission

Unoccupied Surface State on Ag(110) as Revealed by Inverse Photoemission

1984 ◽  
Vol 53 (18) ◽  
pp. 1777-1777 ◽  
Author(s):  
B. Reihl ◽  
R. R. Schlittler ◽  
H. Neff
Keyword(s):  
Surface State ◽  
Inverse Photoemission

Photoemission cross section for a copper surface state

1977 ◽  
Vol 16 (2) ◽  
pp. 706-710 ◽  
Author(s):  
J. B. Danese ◽  
Paul Soven
Keyword(s):  
Cross Section ◽  
Surface State ◽  
Copper Surface

scholarly journals Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Fu-Chien Chiu
Keyword(s):  
Cross Section ◽  
Surface State ◽  
Hafnium Oxide ◽  
Capture Cross Section ◽  
Surface Recombination ◽  
Surface States ◽  
Interfacial Properties ◽  
Surface Recombination Velocity ◽  
Capture Cross ◽  
State Capture

The interfacial properties between silicon and hafnium oxide (HfO2) are explored by the gated-diode method and the subthreshold measurement. The density of interface-trapped charges, the current induced by surface defect centers, the surface recombination velocity, and the surface state capture cross-section are obtained in this work. Among the interfacial properties, the surface state capture cross-section is approximately constant even if the postdeposition annealing condition is changed. This effective capture cross-section of surface states is about 2.4 × 10−15 cm2, which may be an inherent nature in the HfO2/Si interface.

Effect of surface reconstruction on the photoemission cross-section of the Au(111) surface state

2012 ◽  
Vol 24 (39) ◽  
pp. 395006 ◽  
Author(s):  
Patrizia Borghetti ◽  
Jorge Lobo-Checa ◽  
Elizabeth Goiri ◽  
Aitor Mugarza ◽  
Frederik Schiller ◽  
...  
Keyword(s):  
Surface Reconstruction ◽  
Cross Section ◽  
Surface State ◽  
Effect Of Surface
Sign in / Sign up

Export Citation Format

Share Document