Czochralski growth and characterization of the multicomponent garnet (Lu1/4Yb1/4Y1/4Gd1/4)3Al5O12

2021 ◽  
Vol 5 (8) ◽  
Author(s):  
Matheus Pianassola ◽  
Luis Stand ◽  
Madeline Loveday ◽  
Bryan C. Chakoumakos ◽  
Merry Koschan ◽  
...  
Keyword(s):  
Czochralski Growth

TEM characterization of silicon epitaxial layer grown on Si-TaS2, eutectic composites

1991 ◽  
Vol 49 ◽  
pp. 802-803
Author(s):  
C.M. Sung ◽  
M. Levinson ◽  
M. Tabasky ◽  
K. Ostreicher ◽  
B.M. Ditchek
Keyword(s):  
Substrate Surface ◽  
Bulk Sample ◽  
Surface Cleaning ◽  
Native Oxide ◽  
Czochralski Growth ◽  
Ion Milling ◽  
Cross Sectional ◽  
Cleaning Methods ◽  
Field Emission Cathodes

Directionally solidified Si/TaSi2 eutectic composites for the development of electronic devices (e.g. photodiodes and field-emission cathodes) were made using a Czochralski growth technique. High quality epitaxial growth of silicon on the eutectic composite substrates requires a clean silicon substrate surface prior to the growth process. Hence a preepitaxial surface cleaning step is highly desirable. The purpose of this paper is to investigate the effect of surface cleaning methods on the epilayer/substrate interface and the characterization of silicon epilayers grown on Si/TaSi2 substrates by TEM.Wafers were cut normal to the <111> growth axis of the silicon matrix from an approximately 1 cm diameter Si/TaSi2 composite boule. Four pre-treatments were employed to remove native oxide and other contaminants: 1) No treatment, 2) HF only; 3) HC1 only; and 4) both HF and HCl. The cross-sectional specimens for TEM study were prepared by cutting the bulk sample into sheets perpendicular to the TaSi2 fiber axes. The material was then prepared in the usual manner to produce samples having a thickness of 10μm. The final step was ion milling in Ar+ until breakthrough occurred. The TEM samples were then analyzed at 120 keV using the Philips EM400T.

The Role of Fluid Flow Phenomena in the Czochralski Growth of Oxides.

1981 ◽  
Vol 9 ◽  
Author(s):  
D.C. Miller
Keyword(s):  
Fluid Flow ◽  
Defect Density ◽  
Major Effect ◽  
Czochralski Growth ◽  
Simulation Experiments ◽  
Direct Measurements ◽  
Flow Geometry ◽  
Flow Phenomena

ABSTRACTIn the Czochralski growth of single crystals from large melts, fluid flow phenomena have a major effect on interface shape, growth striations, defect density and the length of crystals which can be grown from a melt of given volume and thermal geometry. Because of the technical difficulties encountered in making direct measurements in molten oxides, simulation experiments have been extensively utilized to gain insight into melt behavior.Both temperature profile and flow geometry results from simulation experiments are discussed. This data is supported by direct melt observations and results from the characterization of grown crystals. When reviewed together, this information offers new insights into the complex behavior of Czochralski growth processes, including the role of thermal gradients, crystal rotation, and surface tension driven (Marangoni) convection.

Modified Czochralski growth and characterization of RETiNbO6 crystals

1997 ◽  
Vol 180 (1) ◽  
pp. 73-80 ◽  
Author(s):  
X. Qi ◽  
H.G. Gallagher ◽  
T.P.J. Han ◽  
B. Henderson
Keyword(s):  
Czochralski Growth

Modified Czochralski growth and characterization of Nd3+-doped CsLa(WO4)2 crystal

2011 ◽  
Vol 332 (1) ◽  
pp. 87-93 ◽  
Author(s):  
Wang Zhao ◽  
Weiwei Zhou ◽  
Mingjun Song ◽  
Guofu Wang ◽  
Jianming Du ◽  
...  
Keyword(s):  
Czochralski Growth

The Czochralski growth and characterization of a dual-wavelength Raman gain crystal Sr(MoO4)x(WO4)1−x

2015 ◽  
Vol 49 ◽  
pp. 85-89 ◽  
Author(s):  
Yijian Sun ◽  
Zhaojie Zhu ◽  
Jianfu Li ◽  
Shufang Gao ◽  
Houping Xia ◽  
...  
Keyword(s):  
Dual Wavelength ◽  
Raman Gain ◽  
Czochralski Growth

Czochralski Growth and Characterization of Pure and Yb-Doped LaxYySc4-x-y(BO3)4 Nonlinear and Laser Crystal

2019 ◽  
Author(s):  
Alin Broasca ◽  
Lucian Gheorghe ◽  
Madalin Greculeasa ◽  
Flavius Voicu ◽  
George Stanciu ◽  
...  
Keyword(s):  
Laser Crystal ◽  
Czochralski Growth

scholarly journals Czochralski growth and X-ray topographic characterization of decagonal AlCoNi quasicrystals

2006 ◽  
Vol 86 (3-5) ◽  
pp. 317-322 ◽  
Author(s):  
B. Bauer ◽  
G. Meisterernst ◽  
J. Härtwig ◽  
T. Schenk ◽  
P. Gille
Keyword(s):  
Czochralski Growth ◽  
X Ray

Czochralski growth and characterization of cerium doped calcium scandate

CrystEngComm ◽  
2017 ◽  
Vol 19 (18) ◽  
pp. 2553-2560 ◽  
Author(s):  
C. Guguschev ◽  
J. Philippen ◽  
D. J. Kok ◽  
T. Markurt ◽  
D. Klimm ◽  
...  
Keyword(s):  
Czochralski Growth

Zone-leveling Czochralski growth and characterization of undoped and MgO-doped near-stoichiometric lithium tantalate crystals

2008 ◽  
Vol 311 (1) ◽  
pp. 66-71 ◽  
Author(s):  
W.T. Hsu ◽  
Z.B. Chen ◽  
C.A. You ◽  
Mitch M.C. Chou ◽  
Y.Y. Lin ◽  
...  
Keyword(s):  
Lithium Tantalate ◽  
Czochralski Growth

Czochralski growth and characterization of the piezoelectric single crystal La3Ga5.5Nb0.5O14

2009 ◽  
Vol 149 (31-32) ◽  
pp. 1278-1281 ◽  
Author(s):  
F.P. Yu ◽  
D.R. Yuan ◽  
X. Yin ◽  
S.J. Zhang ◽  
L.H. Pan ◽  
...  
Keyword(s):  
Single Crystal ◽  
Czochralski Growth
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