The Czochralski growth and characterization of a dual-wavelength Raman gain crystal Sr(MoO4)x(WO4)1−x

Directionally solidified Si/TaSi2 eutectic composites for the development of electronic devices (e.g. photodiodes and field-emission cathodes) were made using a Czochralski growth technique. High quality epitaxial growth of silicon on the eutectic composite substrates requires a clean silicon substrate surface prior to the growth process. Hence a preepitaxial surface cleaning step is highly desirable. The purpose of this paper is to investigate the effect of surface cleaning methods on the epilayer/substrate interface and the characterization of silicon epilayers grown on Si/TaSi2 substrates by TEM.Wafers were cut normal to the <111> growth axis of the silicon matrix from an approximately 1 cm diameter Si/TaSi2 composite boule. Four pre-treatments were employed to remove native oxide and other contaminants: 1) No treatment, 2) HF only; 3) HC1 only; and 4) both HF and HCl. The cross-sectional specimens for TEM study were prepared by cutting the bulk sample into sheets perpendicular to the TaSi2 fiber axes. The material was then prepared in the usual manner to produce samples having a thickness of 10μm. The final step was ion milling in Ar+ until breakthrough occurred. The TEM samples were then analyzed at 120 keV using the Philips EM400T.

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The Role of Fluid Flow Phenomena in the Czochralski Growth of Oxides.

MRS Proceedings ◽

10.1557/proc-9-373 ◽

1981 ◽

Vol 9 ◽

Author(s):

D.C. Miller

Keyword(s):

Fluid Flow ◽

Defect Density ◽

Major Effect ◽

Czochralski Growth ◽

Simulation Experiments ◽

Direct Measurements ◽

Flow Geometry ◽

Flow Phenomena

ABSTRACTIn the Czochralski growth of single crystals from large melts, fluid flow phenomena have a major effect on interface shape, growth striations, defect density and the length of crystals which can be grown from a melt of given volume and thermal geometry. Because of the technical difficulties encountered in making direct measurements in molten oxides, simulation experiments have been extensively utilized to gain insight into melt behavior.Both temperature profile and flow geometry results from simulation experiments are discussed. This data is supported by direct melt observations and results from the characterization of grown crystals. When reviewed together, this information offers new insights into the complex behavior of Czochralski growth processes, including the role of thermal gradients, crystal rotation, and surface tension driven (Marangoni) convection.

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Modified Czochralski growth and characterization of RETiNbO6 crystals

Journal of Crystal Growth ◽

10.1016/s0022-0248(97)00205-4 ◽

1997 ◽

Vol 180 (1) ◽

pp. 73-80 ◽

Cited By ~ 16

Author(s):

X. Qi ◽

H.G. Gallagher ◽

T.P.J. Han ◽

B. Henderson

Keyword(s):

Czochralski Growth

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Fabrication and dual-wavelength characterization of a binary mixture of light-responsive polymeric nanocapsules

Optical Materials Express ◽

10.1364/ome.427988 ◽

2021 ◽

Author(s):

M.R. Sharifimehr ◽

Ezeddin Mohajerani

Keyword(s):

Binary Mixture ◽

Dual Wavelength ◽

Polymeric Nanocapsules

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Dual-wavelength extinction rainbow refractometry for in-situ characterization of colloidal droplets

Powder Technology ◽

10.1016/j.powtec.2021.117098 ◽

2022 ◽

pp. 117098

Author(s):

Can Li ◽

Qimeng Lv ◽

Ning Li ◽

Yingchun Wu ◽

Xuecheng Wu ◽

...

Keyword(s):

Dual Wavelength ◽

In Situ Characterization ◽

Rainbow Refractometry

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Dual-wavelength bidirectional pumped high-power Raman fiber laser

High Power Laser Science and Engineering ◽

10.1017/hpl.2018.67 ◽

2019 ◽

Vol 7 ◽

Cited By ~ 7

Author(s):

Zehui Wang ◽

Qirong Xiao ◽

Yusheng Huang ◽

Jiading Tian ◽

Dan Li ◽

...

Keyword(s):

Fiber Laser ◽

Laser Diodes ◽

Spectral Width ◽

Dual Wavelength ◽

Raman Gain ◽

Experimental Demonstration ◽

Frequency Model ◽

Raman Fiber Laser ◽

Passive Fiber ◽

Good Agreement

In this paper, we reported both the experimental demonstration and theoretical analysis of a Raman fiber laser based on a master oscillator–power amplifier configuration. The Raman fiber laser adopted the dual-wavelength bidirectional pumping configuration, utilizing 976 nm laser diodes and 1018 nm fiber lasers as the pump sources. A 60-m-long $25/400~\unicode[STIX]{x03BC}\text{m}$ ytterbium-doped fiber was used to convert the power from 1070 to 1124 nm, realizing a maximum power output of 3.7 kW with a 3 dB spectral width of 6.8 nm. Moreover, we developed a multi-frequency model taking into consideration the Raman gain spectrum and amplified spontaneous emission. The calculated spectral broadening of both the forward and backward laser was in good agreement with the experimental results. Finally, a 1.5 kW, 1183 nm second-order Raman fiber laser was further experimentally demonstrated by the addition of a 70-m-long germanium-doped passive fiber.

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