Electronic states and modulation doping of hexagonal boron nitride trilayers

2021 ◽  
Vol 5 (9) ◽  
Author(s):  
Taishi Haga ◽  
Yuuto Matsuura ◽  
Yoshitaka Fujimoto ◽  
Susumu Saito
2018 ◽  
Vol 1 (1) ◽  
Author(s):  
M. T. Greenaway ◽  
E. E. Vdovin ◽  
D. Ghazaryan ◽  
A. Misra ◽  
A. Mishchenko ◽  
...  

1996 ◽  
Vol 357-358 ◽  
pp. 307-311 ◽  
Author(s):  
A. Nagashima ◽  
N. Tejima ◽  
Y. Gamou ◽  
T. Kawai ◽  
C. Oshima

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Gwangwoo Kim ◽  
Kyung Yeol Ma ◽  
Minsu Park ◽  
Minsu Kim ◽  
Jonghyuk Jeon ◽  
...  

Abstract Atomically sharp heterojunctions in lateral two-dimensional heterostructures can provide the narrowest one-dimensional functionalities driven by unusual interfacial electronic states. For instance, the highly controlled growth of patchworks of graphene and hexagonal boron nitride (h-BN) would be a potential platform to explore unknown electronic, thermal, spin or optoelectronic property. However, to date, the possible emergence of physical properties and functionalities monitored by the interfaces between metallic graphene and insulating h-BN remains largely unexplored. Here, we demonstrate a blue emitting atomic-resolved heterojunction between graphene and h-BN. Such emission is tentatively attributed to localized energy states formed at the disordered boundaries of h-BN and graphene. The weak blue emission at the heterojunctions in simple in-plane heterostructures of h-BN and graphene can be enhanced by increasing the density of the interface in graphene quantum dots array embedded in the h-BN monolayer. This work suggests that the narrowest, atomically resolved heterojunctions of in-plane two-dimensional heterostructures provides a future playground for optoelectronics.


Nano Letters ◽  
2014 ◽  
Vol 14 (9) ◽  
pp. 5128-5132 ◽  
Author(s):  
Robert Drost ◽  
Andreas Uppstu ◽  
Fabian Schulz ◽  
Sampsa K. Hämäläinen ◽  
Mikko Ervasti ◽  
...  

1996 ◽  
Vol 54 (19) ◽  
pp. 13491-13494 ◽  
Author(s):  
A. Nagashima ◽  
Y. Gamou ◽  
M. Terai ◽  
M. Wakabayashi ◽  
C. Oshima

Nanoscale ◽  
2018 ◽  
Vol 10 (9) ◽  
pp. 4361-4369 ◽  
Author(s):  
Feipeng Sun ◽  
Zhuoran Hao ◽  
Guozhen Liu ◽  
Chenping Wu ◽  
Shiqiang Lu ◽  
...  

p-Type conductivity of hexagonal boron nitride has been achieved as a dielectrically tunable monolayer by modulation doping with Mg.


2019 ◽  
Author(s):  
Matěj Velický ◽  
Sheng Hu ◽  
Colin R. Woods ◽  
Peter S. Toth ◽  
Viktor Zólyomi ◽  
...  

Marcus-Hush theory of electron transfer is one of the pillars of modern electrochemistry with a large body of supporting experimental evidence presented to date. However, some predictions, such as the electrochemical behavior at microdisk electrodes, remain unverified. Herein, we present a study of electron tunneling across a hexagonal boron nitride barrier between a graphite electrode and redox levels in a liquid solution. This was achieved by the fabrication of microdisk electrodes with a typical diameter of 5 µm. Analysis of voltammetric measurements, using two common redox mediators, yielded several electrochemical parameters, including the electron transfer rate constant, limiting current, and transfer coefficient. They show a significant departure from the Butler-Volmer behavior in a clear manifestation of the Marcus-Hush theory of electron transfer. In addition, our system provides a novel experimental platform, which could be applied to address a number of scientific problems such as identification of reaction mechanisms, surface modification, or long-range electron transfer.


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