Electronic states of monolayer hexagonal boron nitride formed on the metal surfaces

1996 ◽  
Vol 357-358 ◽  
pp. 307-311 ◽  
Author(s):  
A. Nagashima ◽  
N. Tejima ◽  
Y. Gamou ◽  
T. Kawai ◽  
C. Oshima
Keyword(s):  
Boron Nitride ◽  
Metal Surfaces ◽  
Hexagonal Boron Nitride ◽  
Electronic States

scholarly journals Tunnel spectroscopy of localised electronic states in hexagonal boron nitride

2018 ◽  
Vol 1 (1) ◽  
Author(s):  
M. T. Greenaway ◽  
E. E. Vdovin ◽  
D. Ghazaryan ◽  
A. Misra ◽  
A. Mishchenko ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Electronic States ◽  
Tunnel Spectroscopy

Electronic Structure of Monolayer Hexagonal Boron Nitride Physisorbed on Metal Surfaces

1995 ◽  
Vol 75 (21) ◽  
pp. 3918-3921 ◽  
Author(s):  
A. Nagashima ◽  
N. Tejima ◽  
Y. Gamou ◽  
T. Kawai ◽  
C. Oshima
Keyword(s):  
Electronic Structure ◽  
Boron Nitride ◽  
Metal Surfaces ◽  
Hexagonal Boron Nitride

scholarly journals Blue emission at atomically sharp 1D heterojunctions between graphene and h-BN

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Gwangwoo Kim ◽  
Kyung Yeol Ma ◽  
Minsu Park ◽  
Minsu Kim ◽  
Jonghyuk Jeon ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Boron Nitride ◽  
Physical Properties ◽  
Hexagonal Boron Nitride ◽  
Graphene Quantum Dots ◽  
Blue Emission ◽  
Electronic States ◽  
Optoelectronic Property ◽  
Two Dimensional ◽  
One Dimensional

Abstract Atomically sharp heterojunctions in lateral two-dimensional heterostructures can provide the narrowest one-dimensional functionalities driven by unusual interfacial electronic states. For instance, the highly controlled growth of patchworks of graphene and hexagonal boron nitride (h-BN) would be a potential platform to explore unknown electronic, thermal, spin or optoelectronic property. However, to date, the possible emergence of physical properties and functionalities monitored by the interfaces between metallic graphene and insulating h-BN remains largely unexplored. Here, we demonstrate a blue emitting atomic-resolved heterojunction between graphene and h-BN. Such emission is tentatively attributed to localized energy states formed at the disordered boundaries of h-BN and graphene. The weak blue emission at the heterojunctions in simple in-plane heterostructures of h-BN and graphene can be enhanced by increasing the density of the interface in graphene quantum dots array embedded in the h-BN monolayer. This work suggests that the narrowest, atomically resolved heterojunctions of in-plane two-dimensional heterostructures provides a future playground for optoelectronics.

scholarly journals Hexagonal boron nitride on transition metal surfaces

2013 ◽  
Vol 132 (4) ◽  
Author(s):  
Jaime Gómez Díaz ◽  
Yun Ding ◽  
Ralph Koitz ◽  
Ari P. Seitsonen ◽  
Marcella Iannuzzi ◽  
...  
Keyword(s):  
Transition Metal ◽  
Boron Nitride ◽  
Metal Surfaces ◽  
Hexagonal Boron Nitride ◽  
Transition Metal Surfaces

Electronic States at the Graphene–Hexagonal Boron Nitride Zigzag Interface

Nano Letters ◽  
2014 ◽  
Vol 14 (9) ◽  
pp. 5128-5132 ◽  
Author(s):  
Robert Drost ◽  
Andreas Uppstu ◽  
Fabian Schulz ◽  
Sampsa K. Hämäläinen ◽  
Mikko Ervasti ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Electronic States

ELECTRON SPECTROSCOPIC STUDIES OF MONOLAYER HEXAGONAL BORON NITRIDE PHYSISORBED ON METAL SURFACES

1996 ◽  
Vol 10 (26) ◽  
pp. 3517-3537 ◽  
Author(s):  
A. NAGASHIMA ◽  
N. TEJIMA ◽  
Y. GAMOU ◽  
T. KAWAI ◽  
M. TERAI ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Metal Surfaces ◽  
Hexagonal Boron Nitride ◽  
Spectroscopic Studies ◽  
Metal Substrate ◽  
Rare Gas ◽  
Interband Transitions ◽  
Energy Bands ◽  
Excitation Energies ◽  
Crystalline Films

The electronic properties of single-crystalline films of monolayer hexagonal boron nitride (h-BN) formed on Ni(111), Pd(111), and Pt(111) are reviewed. From the comparison of the present data with those for the rare-gas solids on metal surfaces, the interaction between the BN film and the metal substrate has been assigned to be physisorption. The valence- and conduction-band structures of the monolayer h-BN are almost independent of the substrate. The energy bands and core-levels in the BN film align with respect to the vacuum level, not to the Fermi level. In accord with these ground-state properties of the BN/metal system, the observed excitation energies for interband transitions change from one substrate to the other depending on the work function.

Electronic states and modulation doping of hexagonal boron nitride trilayers

2021 ◽  
Vol 5 (9) ◽  
Author(s):  
Taishi Haga ◽  
Yuuto Matsuura ◽  
Yoshitaka Fujimoto ◽  
Susumu Saito
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Electronic States ◽  
Modulation Doping

Electronic states of the heteroepitaxial double-layer system: Graphite/monolayer hexagonal boron nitride/Ni(111)

1996 ◽  
Vol 54 (19) ◽  
pp. 13491-13494 ◽  
Author(s):  
A. Nagashima ◽  
Y. Gamou ◽  
M. Terai ◽  
M. Wakabayashi ◽  
C. Oshima
Keyword(s):  
Boron Nitride ◽  
Double Layer ◽  
Hexagonal Boron Nitride ◽  
Electronic States ◽  
Layer System ◽  
Double Layer System

Marcus-Hush Theory Revealed by Electron Tunneling Through Hexagonal Boron Nitride

2019 ◽  
Author(s):  
Matěj Velický ◽  
Sheng Hu ◽  
Colin R. Woods ◽  
Peter S. Toth ◽  
Viktor Zólyomi ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Boron Nitride ◽  
Electron Tunneling ◽  
Hexagonal Boron Nitride ◽  
Large Body ◽  
Liquid Solution ◽  
Limiting Current ◽  
Electron Transfer Rate Constant ◽  
Electrochemical Parameters ◽  
Voltammetric Measurements

Marcus-Hush theory of electron transfer is one of the pillars of modern electrochemistry with a large body of supporting experimental evidence presented to date. However, some predictions, such as the electrochemical behavior at microdisk electrodes, remain unverified. Herein, we present a study of electron tunneling across a hexagonal boron nitride barrier between a graphite electrode and redox levels in a liquid solution. This was achieved by the fabrication of microdisk electrodes with a typical diameter of 5 µm. Analysis of voltammetric measurements, using two common redox mediators, yielded several electrochemical parameters, including the electron transfer rate constant, limiting current, and transfer coefficient. They show a significant departure from the Butler-Volmer behavior in a clear manifestation of the Marcus-Hush theory of electron transfer. In addition, our system provides a novel experimental platform, which could be applied to address a number of scientific problems such as identification of reaction mechanisms, surface modification, or long-range electron transfer.

Sign in / Sign up

Export Citation Format

Share Document