Lattice-parameter measurement technique for single crystals using two lattice planes, and its application to Gd3Ga5O12single crystals

1976 ◽  
Vol 9 (4) ◽  
pp. 342-346 ◽  
Author(s):  
S. Isomae ◽  
S. Kishino ◽  
K. Takagi ◽  
M. Ishii ◽  
M. Maki
Keyword(s):  
Single Crystals ◽  
Measurement Technique ◽  
Lattice Parameter ◽  
Parameter Measurement ◽  
Lattice Parameter Measurement ◽  
Lattice Planes

Oxygen Concentration Determination in Silicon Single Crystals by Precision Lattice Parameter Measurement

1990 ◽  
Vol 34 ◽  
pp. 577-586
Author(s):  
H. Ohmori ◽  
M. Tomita ◽  
N. Tsuchiya ◽  
Y. Matsushita
Keyword(s):  
Single Crystals ◽  
Oxygen Concentration ◽  
Diffraction Method ◽  
Lattice Parameter ◽  
Peak Position ◽  
Silicon Wafers ◽  
Parameter Measurement ◽  
Lattice Parameter Measurement ◽  
Precise Adjustment ◽  
Fitting In

AbstractPrecision lattice parameter measurement by the X-ray diffraction method of Bond [1] has been examined as a substitutional method for IR in determining the oxygen concentration in silicon single crystals. Asymmetric 444 CuKai reflections were measured for undoped (100) oriented silicon wafers to obtain the correlation curve between the silicon lattice parameter and oxygen concentration. Precise adjustment of the optical system and computer fitting in determining the peak position allow a minute lattice dilation of silicon due to oxygen to be detected by the Bond method. The precision of this measurement system was of the order of 10-6. The lattice expansion of silicon by dissolved oxygen was determined to be at the rate of 3.2X10-24 atoms of oxygen per cm3. Furthermore, the oxygen concentrations of heavily Sb-doped silicon wafers were determined nondestructively.

Lattice parameter measurement by CBED: Accuracy limited by the noise

2003 ◽  
Vol 9 (S03) ◽  
pp. 356-357
Author(s):  
Andrey Chuvilin ◽  
Thomas Kups ◽  
Ute Kaiser
Keyword(s):  
Lattice Parameter ◽  
Parameter Measurement ◽  
Lattice Parameter Measurement
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