Structure and low-temperature thermal relaxation of ion-implanted germanium

2001 ◽  
Vol 8 (2) ◽  
pp. 773-775 ◽  
Author(s):  
C. J. Glover ◽  
M. C. Ridgway ◽  
K. M. Yu ◽  
G. J. Foran ◽  
C. Clerc ◽  
...  
1990 ◽  
Vol 73 (6) ◽  
pp. 86-91
Author(s):  
Tadahiro Ohmi ◽  
Yoshio Ishihara ◽  
Tadashi Shibata ◽  
Akira Okita

1980 ◽  
Vol 36 (12) ◽  
pp. 994-996 ◽  
Author(s):  
J. S. Williams ◽  
M. W. Austin

Pramana ◽  
1992 ◽  
Vol 39 (4) ◽  
pp. 391-404 ◽  
Author(s):  
S Banerjee ◽  
M W J Prins ◽  
K P Rajeev ◽  
A K Raychaudhuri

2014 ◽  
Vol 32 (4) ◽  
pp. 626-632 ◽  
Author(s):  
Pramod Yadawa

AbstractHigher order elastic constants have been calculated in hexagonally structured superionic conductor Li3N at room temperature using the interaction potential model. The temperature variation of the ultrasonic velocities was evaluated along different angles with z axis (unique axis) of the crystal, using the second order elastic constants. The ultrasonic velocity decreased with the temperature along a particular orientation of the unique axis. Temperature variation of the thermal relaxation time and Debye average velocities was also calculated along the same orientation. The temperature dependency of ultrasonic properties was discussed in correlation with elastic, thermal and electrical properties. It has been found that the thermal conductivity is the main contributor to the behavior of ultrasonic attenuation as a function of temperature and the cause responsible for attenuation is phonon-phonon interaction. The mechanical properties of Li3N at low temperature are better than at high temperature because at low temperature it has low ultrasonic attenuation. Superionic conductor lithium nitride has many industrial applications, such as those used in portable electronic devices.


2010 ◽  
Vol 1245 ◽  
Author(s):  
Terry L. Alford ◽  
Karthik Sivaramakrishnan ◽  
Anil Indluru ◽  
Iftikhar Ahmad ◽  
Bob Hubbard ◽  
...  

AbstractVariable frequency microwaves (VFM) and rapid thermal annealing (RTA) were used to activate ion implanted dopants and re-grow implant-damaged silicon. Four-point-probe measurements were used to determine the extent of dopant activation and revealed comparable resistivities for 30 seconds of RTA annealing at 900 °C and 6-9 minutes of VFM annealing at 540 °C. Ion channeling analysis spectra revealed that microwave heating removes the Si damage that results from arsenic ion implantation to an extent comparable to RTA. Cross-section transmission electron microscopy demonstrates that the silicon lattice regains nearly all of its crystallinity after microwave processing of arsenic implanted silicon. Secondary ion mass spectroscopy reveals limited diffusion of dopants in VFM processed samples when compared to rapid thermal annealing. Our results establish that VFM is an effective means of low-temperature dopant activation in ion-implanted Si.


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