scholarly journals Understanding the formation of multiply twinned structure in decahedral intermetallic nanoparticles

IUCrJ ◽  
2019 ◽  
Vol 6 (3) ◽  
pp. 447-453 ◽  
Author(s):  
Chao Liang ◽  
Yi Yu

The structure of monometallic decahedral multiply twinned nanoparticles (MTPs) has been extensively studied, whereas less is known about intermetallic MTPs, especially the mechanism of formation of multiply twinned structures, which remains to be understood. Here, by using aberration-corrected scanning transmission electron microscopy, a detailed structural study of AuCu decahedral intermetallic MTPs is presented. Surface segregation has been revealed on the atomic level and the multiply twinned structure was studied systematically. Significantly different from Au and Cu, the intermetallic AuCu MTP adopts a solid-angle deficiency of −13.35°, which represents an overlap instead of a gap (+7.35° gap for Au and Cu). By analysing and summarizing the differences and similarities among AuCu and other existing monometallic/intermetallic MTPs, the formation mechanism has been investigated from both energetic and geometric perspectives. Finally, a general framework for decahedral MTPs has been proposed and unknown MTPs could be predicted on this basis.

2011 ◽  
Vol 17 (4) ◽  
pp. 578-581 ◽  
Author(s):  
David Hernández-Maldonado ◽  
Miriam Herrera ◽  
Pablo Alonso-González ◽  
Yolanda González ◽  
Luisa González ◽  
...  

AbstractWe show in this article that it is possible to obtain elemental compositional maps and profiles with atomic-column resolution across an InxGa1−xAs multilayer structure from 5th-order aberration-corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) images. The compositional profiles obtained from the analysis of HAADF-STEM images describe accurately the distribution of In in the studied multilayer in good agreement with Muraki's segregation model [Muraki, K., Fukatsu, S., Shiraki, Y. & Ito, R. (1992). Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantums wells. Appl Phys Lett61, 557–559].


2010 ◽  
Vol 16 (S2) ◽  
pp. 66-67 ◽  
Author(s):  
M Watanabe ◽  
E Okunishi ◽  
T Aoki

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.


2013 ◽  
Vol 19 (S2) ◽  
pp. 1238-1239
Author(s):  
G. Nicotra ◽  
Q.M. Ramasse ◽  
I. Deretzis ◽  
C. Bongiorno ◽  
C. Spinella ◽  
...  

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.


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