scholarly journals Extracting Local Crystallographic Structure Using 4D-STEM Datasets

2014 ◽  
Vol 70 (a1) ◽  
pp. C1455-C1455 ◽  
Author(s):  
Colin Ophus ◽  
Peter Ercius ◽  
Michael Sarahan ◽  
Cory Czarnik ◽  
Jim Ciston

Traditional scanning transmission electron microscopy (STEM) detectors are monolithic and integrate a subset of the transmitted electron beam signal scattered from each electron probe position. These convergent beam electron diffraction patterns (CBED) are extremely rich in information, containing localized information on sample structure, composition, phonon spectra, three-dimensional defect crystallography and more. Many new imaging modes become possible if the full CBED pattern is recorded at many probe positions with millisecond dwell times. In this study, we have used a Gatan K2-IS direct electron detection camera installed on an uncorrected FEI Titan-class transmission electron microscope to record 4D-STEM probe diffraction patterns on a variety of samples at up to 1600 frames per second. As an example, a 4D-STEM dataset for a multilayer stack of epitaxial SrTiO3 and mixed LaMnO3-SrTiO3 is plotted in Figure 1. Figure 1A shows a HAADF micrograph of the multilayer along a (001) zone axis. Only the A sites (Sr and La) are visible in this micrograph and the composition can be roughly determined from the relative brightness. One possible 4D-STEM technique is position-averaged convergent beam electron diffraction (PACBED) described by LeBeau et al. [1]. We can easily construct ideal PACBED patterns by averaging the probe images over each unit cell fitted from Figure 1A, which is shown in Figure 1B. By matching these patterns to PACBED images simulated with the multislice method we can precisely determine parameters such as sample thickness and composition, the latter of which is plotted in Figure 1C. For comparison, the composition has also been determined with electron energy loss spectroscopy (EELS) in a separate experiment, shown in Figure 1D. The composition range of 0-85% LaMnO3 measured by PACBED is in good agreement with the EELS measurements. In this talk we will demonstrate several other possible uses for 4D-STEM datasets.

Author(s):  
John F. Mansfield

One of the most important advancements of the transmission electron microscopy (TEM) in recent years has been the development of the analytical electron microscope (AEM). The microanalytical capabilities of AEMs are based on the three major techniques that have been refined in the last decade or so, namely, Convergent Beam Electron Diffraction (CBED), X-ray Energy Dispersive Spectroscopy (XEDS) and Electron Energy Loss Spectroscopy (EELS). Each of these techniques can yield information on the specimen under study that is not obtainable by any other means. However, it is when they are used in concert that they are most powerful. The application of CBED in materials science is not restricted to microanalysis. However, this is the area where it is most frequently employed. It is used specifically to the identification of the lattice-type, point and space group of phases present within a sample. The addition of chemical/elemental information from XEDS or EELS spectra to the diffraction data usually allows unique identification of a phase.


Author(s):  
J W Steeds

That the techniques of convergent beam electron diffraction (CBED) are now widely practised is evident, both from the way in which they feature in the sale of new transmission electron microscopes (TEMs) and from the frequency with which the results appear in the literature: new phases of high temperature superconductors is a case in point. The arrival of a new generation of TEMs operating with coherent sources at 200-300kV opens up a number of new possibilities.First, there is the possibility of quantitative work of very high accuracy. The small probe will essentially eliminate thickness or orientation averaging and this, together with efficient energy filtering by a doubly-dispersive electron energy loss spectrometer, will yield results of unsurpassed quality. The Bloch wave formulation of electron diffraction has proved itself an effective and efficient method of interpreting the data. The treatment of absorption in these calculations has recently been improved with the result that <100> HOLZ polarity determinations can now be performed on III-V and II-VI semiconductors.


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