A very-high impedance, high-swing cascode stage for sub-micron analog VLSI

1997 ◽  
Vol 13 (4) ◽  
pp. 49-50 ◽  
Author(s):  
E. Tiiliharju ◽  
S. Zarabadi ◽  
M. Ismail ◽  
K. Halonen
Keyword(s):  
Author(s):  
E Raguvaran ◽  
N Deepak Prasath ◽  
J Alexander ◽  
N Prithiviraj ◽  
M Santhanalakshmi

CORROSION ◽  
1968 ◽  
Vol 24 (6) ◽  
pp. 159-162 ◽  
Author(s):  
H. J. CLEARY

Abstract Microelectrode technology is currently being developed by medical and biological workers for use in microanalytic and intracellular studies. The possibilities of applying this new technology to investigations of corrosion phenomena are examined in the paper. Oxygen cathode, pH and potential-measuring microelectrodes with working tips ranging from 10 to 100 microns in diameter are being developed for the study of corrosion mechanisms. Techniques for the construction, storage, calibration and use of stable electrodes are described. Probe dimensions and very high impedance characteristics lead to positioning and electrical measurement difficulties which are also discussed.


2014 ◽  
Vol 2 (4) ◽  
pp. SP5-SP20 ◽  
Author(s):  
Ram Janma Singh

Seismic amplitude anomalies are attractive exploration targets in the Krishna-Godavari Basin offshore India. These bright spots mostly have very high amplitudes, so confident interpretations have been possible. We distinguished between hydrocarbon-bearing sands, water-bearing sands, and high-impedance nonreservoir bodies. Also, we mapped channel architecture and accurately predicted reservoir thickness. Strong amplitude anomalies, prospective seismic character based on an understanding of data phase and polarity, flat spots, and amplitude versus offset have all provided valuable evidence.


1969 ◽  
Vol 57 (2) ◽  
pp. 244-245 ◽  
Author(s):  
R.W.J. Barker ◽  
B.L. Hart

1947 ◽  
Vol 24 (4) ◽  
pp. 109-109
Author(s):  
D C Gall ◽  
F C Widdis
Keyword(s):  

1946 ◽  
Vol 23 (12) ◽  
pp. 287-287
Author(s):  
D C Gall ◽  
F C Widdis
Keyword(s):  

2012 ◽  
Vol 21 (04) ◽  
pp. 1250031 ◽  
Author(s):  
PARSHOTAM S. MANHAS ◽  
K. PAL

This paper presents floating gate MOSFET (FGMOS)-based second generation differential voltage current conveyor (DVCCII) at low voltage levels. In analog circuit design, the FGMOS transistors are very often used in low voltage circuits, where the reduction obtained in the transistor apparent threshold voltage is of great importance. The given circuit provides very high input impedance at its Y-terminals, low output impedance at X-terminal and high impedance at Z-terminals and consumes less power. This circuit is a powerful building block, especially for applications demanding differential or floating inputs. The circuit behavior has been verified using PSpice simulations for 0.5 μm technology and indicates the excellent performance.


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