Suppression of the floating-body effect in SOI MOSFET's by the bandgap engineering method using a Si/sub 1-x/Ge/sub x/ source structure

1997 ◽  
Vol 44 (3) ◽  
pp. 423-430 ◽  
Author(s):  
M. Yoshimi ◽  
M. Terauchi ◽  
A. Nishiyama ◽  
O. Arisumi ◽  
A. Murakoshi ◽  
...  
Keyword(s):  
Engineering Method ◽  
Floating Body ◽  
Bandgap Engineering ◽  
Body Effect ◽  
Floating Body Effect ◽  
Source Structure

Simulation of suppression of floating-body effect in partially depleted SOI MOSFET using a Si1−xGex dual source structure

2004 ◽  
Vol 114-115 ◽  
pp. 264-268 ◽  
Author(s):  
Ming Zhu ◽  
Peng Chen ◽  
Ricky K.Y. Fu ◽  
Weili Liu ◽  
Chenglu Lin ◽  
...  
Keyword(s):  
Floating Body ◽  
Body Effect ◽  
Soi Mosfet ◽  
Floating Body Effect ◽  
Dual Source ◽  
Source Structure

Suppression of the Floating-Body Effect of Vertical-Cell DRAM With the Buried Body Engineering Method

2018 ◽  
Vol 65 (8) ◽  
pp. 3237-3242 ◽  
Author(s):  
Youngseung Cho ◽  
Huijung Kim ◽  
Kyungho Jung ◽  
Bongsoo Kim ◽  
Yoosang Hwang ◽  
...  
Keyword(s):  
Engineering Method ◽  
Floating Body ◽  
Body Effect ◽  
Floating Body Effect ◽  
Vertical Cell
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