High-temperature, low threshold current, and uniform operation 1×12 monolithic AlGaInAs/InP strain-compensated multiple quantum well laser array in 1.5 μm

Chia-Chien Lin;  Meng-Chyi Wu;  Hung-Ping Shiao;  Kuo-Shung Liu

doi:10.1109/16.777148

High-temperature, low threshold current, and uniform operation 1×12 monolithic AlGaInAs/InP strain-compensated multiple quantum well laser array in 1.5 μm

IEEE Transactions on Electron Devices ◽

10.1109/16.777148 ◽

1999 ◽

Vol 46 (8) ◽

pp. 1614-1618 ◽

Cited By ~ 1

Author(s):

Chia-Chien Lin ◽

Meng-Chyi Wu ◽

Hung-Ping Shiao ◽

Kuo-Shung Liu

Keyword(s):

High Temperature ◽

Quantum Well ◽

Multiple Quantum Well ◽

Threshold Current ◽

Multiple Quantum ◽

Laser Array ◽

Quantum Well Laser ◽

Low Threshold ◽

Multiple Quantum Well Laser

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High-Temperature and Low-Threshold-Current Operation of 1.5 µm AlGaInAs/InP Strain-Compensated Multiple Quantum Well Laser Diodes

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.3309 ◽

1998 ◽

Vol 37 (Part 1, No. 6A) ◽

pp. 3309-3312 ◽

Cited By ~ 4

Author(s):

Chia-Chien Lin ◽

Kuo-Shung Liu ◽

Meng-Chyi Wu ◽

Hung-Pin Shiao

Keyword(s):

High Temperature ◽

Quantum Well ◽

Multiple Quantum Well ◽

Laser Diodes ◽

Threshold Current ◽

Multiple Quantum ◽

Quantum Well Laser ◽

Low Threshold ◽

Current Operation ◽

Multiple Quantum Well Laser

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High temperature and low threshold current operation of strained AlGaInP/Ga0.4In0.6P multiple quantum well laser diodes emitting at 676 nm

Electronics Letters ◽

10.1049/el:19940356 ◽

1994 ◽

Vol 30 (6) ◽

pp. 494-495 ◽

Cited By ~ 1

Author(s):

J.-F. Lin ◽

M.-C. Wu ◽

C.-M. Chang ◽

T.-P. Chen ◽

S.-W. Luh ◽

...

Keyword(s):

High Temperature ◽

Quantum Well ◽

Multiple Quantum Well ◽

Laser Diodes ◽

Threshold Current ◽

Multiple Quantum ◽

Quantum Well Laser ◽

Low Threshold ◽

Current Operation ◽

Multiple Quantum Well Laser

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Very Low Threshold Current Operation of 1.3-µm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.l643 ◽

2003 ◽

Vol 42 (Part 2, No. 6B) ◽

pp. L643-L645 ◽

Cited By ~ 1

Author(s):

Ming-Yuan Wu ◽

Chi-Da Yang ◽

Po-Hsun Lei ◽

Meng-Chyi Wu ◽

Wen-Jeng Ho

Keyword(s):

Quantum Well ◽

Multiple Quantum Well ◽

Laser Diodes ◽

Threshold Current ◽

Multiple Quantum ◽

Quantum Well Laser ◽

Low Threshold ◽

Current Operation ◽

Multiple Quantum Well Laser

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High-power and low-threshold-current operation of 1.3 μm strain-compensated AlGaInAs/AlGaInAs multiple-quantum-well laser diodes

Solid-State Electronics ◽

10.1016/s0038-1101(02)00171-5 ◽

2002 ◽

Vol 46 (12) ◽

pp. 2041-2044 ◽

Cited By ~ 6

Author(s):

Po-Hsun Lei ◽

Ming-Yuan Wu ◽

Chia-Chien Lin ◽

Wen-Jeng Ho ◽

Meng-Chyi Wu

Keyword(s):

Quantum Well ◽

High Power ◽

Multiple Quantum Well ◽

Laser Diodes ◽

Threshold Current ◽

Multiple Quantum ◽

Quantum Well Laser ◽

Low Threshold ◽

Current Operation ◽

Multiple Quantum Well Laser

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Low threshold 2.72 [micro sign]m GaInAsSb∕ AlGaAsSb multiple-quantum-well laser

Electronics Letters ◽

10.1049/el:20021126 ◽

2002 ◽

Vol 38 (25) ◽

pp. 1678 ◽

Cited By ~ 20

Author(s):

M. Grau ◽

C. Lin ◽

M.-C. Amann

Keyword(s):

Quantum Well ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Quantum Well Laser ◽

Low Threshold ◽

Multiple Quantum Well Laser

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Effects of non‐uniform charge injection on gain, threshold current, and linewidth enhancement factor for a 1.55 μm InP‐based multiple quantum well laser

Journal of Applied Physics ◽

10.1063/1.363756 ◽

1996 ◽

Vol 80 (12) ◽

pp. 6875-6879 ◽

Cited By ~ 3

Author(s):

R. Jambunathan ◽

J. Singh

Keyword(s):

Quantum Well ◽

Enhancement Factor ◽

Multiple Quantum Well ◽

Threshold Current ◽

Multiple Quantum ◽

Linewidth Enhancement Factor ◽

Quantum Well Laser ◽

Linewidth Enhancement ◽

Multiple Quantum Well Laser ◽

Gain Threshold

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High temperature (≳150 °C) and low threshold current operation of AlGaInP/GaxIn1−xP strained multiple quantum well visible laser diodes

Applied Physics Letters ◽

10.1063/1.105723 ◽

1991 ◽

Vol 59 (26) ◽

pp. 3351-3353 ◽

Cited By ~ 35

Author(s):

T. Katsuyama ◽

I. Yoshida ◽

J. Shinkai ◽

J. Hashimoto ◽

H. Hayashi

Keyword(s):

High Temperature ◽

Quantum Well ◽

Multiple Quantum Well ◽

Laser Diodes ◽

Threshold Current ◽

Multiple Quantum ◽

Visible Laser ◽

Low Threshold ◽

Current Operation

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Low threshold current and high temperature operation of 1.55 [micro sign]m strain-compensated multiple quantum well AlInAs/AlGaInAs laser diodes

Electronics Letters ◽

10.1049/el:19981256 ◽

1998 ◽

Vol 34 (17) ◽

pp. 1667 ◽

Cited By ~ 8

Author(s):

Chia-Chien Lin ◽

Kuo-Shung Liu ◽

Meng-Chyi Wu ◽

Hung-Pin Shiao

Keyword(s):

High Temperature ◽

Quantum Well ◽

Multiple Quantum Well ◽

Laser Diodes ◽

Threshold Current ◽

Multiple Quantum ◽

Low Threshold ◽

High Temperature Operation

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Low threshold and high power output 1.5 μm InGaAs/InGaAsP separate confinement multiple quantum well laser grown by chemical beam epitaxy

Applied Physics Letters ◽

10.1063/1.103942 ◽

1990 ◽

Vol 57 (20) ◽

pp. 2065-2067 ◽

Cited By ~ 32

Author(s):

W. T. Tsang ◽

M. C. Wu ◽

T. Tanbun‐Ek ◽

R. A. Logan ◽

S. N. G. Chu ◽

...

Keyword(s):

Quantum Well ◽

High Power ◽

Power Output ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Chemical Beam Epitaxy ◽

Quantum Well Laser ◽

High Power Output ◽

Low Threshold ◽

Multiple Quantum Well Laser

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Influence of Magnetic Field on the Threshold Current, Temperature Characteristics, and on the Output Power in AlGaInP Multiple Quantum Well Laser

Applied Physics Research ◽

10.5539/apr.v3n2p143 ◽

2011 ◽

Vol 3 (2) ◽

Author(s):

Tho-Alfiqar Ali Zaker ◽

Aurangzeb Khurram Hafiz

Keyword(s):

Magnetic Field ◽

Quantum Well ◽

Output Power ◽

Multiple Quantum Well ◽

Threshold Current ◽

Multiple Quantum ◽

Temperature Characteristics ◽

Quantum Well Laser ◽

Multiple Quantum Well Laser

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