High-Temperature and Low-Threshold-Current Operation of 1.5 µm AlGaInAs/InP Strain-Compensated Multiple Quantum Well Laser Diodes
1998 ◽
Vol 37
(Part 1, No. 6A)
◽
pp. 3309-3312
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2003 ◽
Vol 42
(Part 2, No. 6B)
◽
pp. L643-L645
◽
2002 ◽
Vol 46
(12)
◽
pp. 2041-2044
◽
Keyword(s):
1999 ◽
Vol 46
(8)
◽
pp. 1614-1618
◽
2003 ◽
Vol 42
(Part 2, No. 12B)
◽
pp. L1507-L1508
Keyword(s):
2002 ◽
Vol 49
(7)
◽
pp. 1129-1135
◽
Keyword(s):