Optimum base doping profile for minimum base transit time

IEEE Transactions on Electron Devices ◽

10.1109/16.83740 ◽

1991 ◽

Vol 38 (9) ◽

pp. 2128-2133 ◽

Author(s):

K. Suzuki

Keyword(s):

Transit Time ◽

Doping Profile ◽

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Analytical modelling of base transit time and early voltage of InP/InGaAs Heterojunction Bipolar Transistor for nonuniform base doping profile

IEEE Technology Students' Symposium ◽

10.1109/techsym.2011.5783823 ◽

2011 ◽

Author(s):

S Chowdhury ◽

S Basu

Keyword(s):

Transit Time ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Analytical Modelling ◽

Doping Profile ◽

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Base transit time of submicron bipolar transistors including nonuniform base doping profile and high current effects

10.1109/edms.1994.863875 ◽

2005 ◽

Author(s):

J.J. Liou ◽

C.S. Ho

Keyword(s):

Transit Time ◽

Bipolar Transistors ◽

Doping Profile ◽

High Current ◽

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Optimum base-doping profile for minimum base transit time considering velocity saturation at base-collector junction and dependence of mobility and bandgap narrowing on doping concentration

IEEE Transactions on Electron Devices ◽

10.1109/16.944202 ◽

2001 ◽

Vol 48 (9) ◽

pp. 2102-2107 ◽

Author(s):

K. Suzuki

Keyword(s):

Transit Time ◽

Doping Concentration ◽

Doping Profile ◽

Velocity Saturation ◽

Bandgap Narrowing ◽

Collector Junction ◽

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Optimization of base doping profile for minimum transit time in bipolar transistors

1997 21st International Conference on Microelectronics. Proceedings ◽

10.1109/icmel.1997.625267 ◽

2002 ◽

Author(s):

P.G. Rinaldi ◽

N.F. Rinaldi

Keyword(s):

Transit Time ◽

Bipolar Transistors ◽

Doping Profile ◽

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Base transit time of submicron bipolar transistors including nonuniform base doping profile and high current effects

10.1109/edms.1994.771360 ◽

2005 ◽

Author(s):

J.J. Liou ◽

C.S. Ho

Keyword(s):

Transit Time ◽

Bipolar Transistors ◽

Doping Profile ◽

High Current ◽

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On the iterative schemes to obtain base doping profiles for reducing base transit time in a bipolar transistor

IEEE Transactions on Electron Devices ◽

10.1109/16.925251 ◽

2001 ◽

Vol 48 (6) ◽

pp. 1222-1224 ◽

Author(s):

M. Jagadesh Kumar ◽

V.S. Patri

Keyword(s):

Transit Time ◽

Bipolar Transistor ◽

Iterative Schemes ◽

Doping Profiles ◽

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Numerical investigate of base doping for minimum base transit time

2010 2nd International Conference on Software Technology and Engineering ◽

10.1109/icste.2010.5608777 ◽

2010 ◽

Author(s):

Abolfazl Rahmani ◽

Omid Seryasat ◽

S. E. Hosseini

Keyword(s):

Transit Time ◽

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An iteration approach for base doping optimization to minimize the base transit time in triangular-Ge-profile SiGe HBTs

Solid-State Electronics ◽

10.1016/j.sse.2007.03.014 ◽

2007 ◽

Vol 51 (6) ◽

pp. 961-964 ◽

Author(s):

Gagan Khanduri ◽

Brishbhan Panwar

Keyword(s):

Transit Time ◽

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Impact of base doping profile on stability characteristics of SiGe HBTs

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings ◽

10.1109/icsict.2006.306132 ◽

2006 ◽

Author(s):

Ningyue Jiang ◽

Zhenqiang Ma

Keyword(s):

Doping Profile ◽

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Determination of the fitting parameters for using uniform emitter and base doping profile in bipolar transistor modeling

Solid-State Electronics ◽

10.1016/0038-1101(94)90124-4 ◽

1994 ◽

Vol 37 (1) ◽

pp. 183-186 ◽

Author(s):

J.J. Liou ◽

C.S. Ho ◽

A. Kager

Keyword(s):

Bipolar Transistor ◽

Doping Profile ◽

Fitting Parameters ◽

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