Optimum base-doping profile for minimum base transit time considering velocity saturation at base-collector junction and dependence of mobility and bandgap narrowing on doping concentration

2001 ◽  
Vol 48 (9) ◽  
pp. 2102-2107 ◽  
Author(s):  
K. Suzuki
Keyword(s):  
Transit Time ◽  
Doping Concentration ◽  
Doping Profile ◽  
Velocity Saturation ◽  
Bandgap Narrowing ◽  
Collector Junction ◽  
Base Doping

Theoretical Optimization of Base Doping Concentration for Radiation Resistance of InGaP Subcells of InGaP/GaAs/Ge Based on Minority-Carrier Lifetime

2010 ◽  
Vol 49 (12) ◽  
pp. 121201 ◽  
Author(s):  
Dalia Elfiky ◽  
Masafumi Yamaguchi ◽  
Takuo Sasaki ◽  
Tatsuya Takamoto ◽  
Chiharu Morioka ◽  
...  
Keyword(s):  
Radiation Resistance ◽  
Doping Concentration ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Base Doping

Transient Performance of >10kV SiC IGBT with an Optimized Retrograde p-Well

2020 ◽  
Vol 1004 ◽  
pp. 917-922
Author(s):  
Amit K. Tiwari ◽  
Marina Antoniou ◽  
Tatjana Trajkovic ◽  
Tian Dai ◽  
Peter M. Gammon ◽  
...  
Keyword(s):  
Doping Concentration ◽  
Short Circuit ◽  
Substantial Reduction ◽  
Doping Profile ◽  
Development Cost ◽  
Transient Performance ◽  
Retrograde Approach ◽  
Switching Losses ◽  
The Impact

The impact of different p-well designs upon the transient performance, in particular, the turn-off losses and short-circuit capability, of a >10 kV SiC n-IGBT is assessed. We find that in addition to improved transient performance, a substantial reduction in the depth of p-well implants can be achieved, if an extensively optimized retrograde approach is utilized. A conventional p-well consisting of a uniformly doped deep implant (doping concentration of ~3×1017 cm-3 and depth of >1.5 µm) exhibits considerable turn-off switching losses without offering any short circuit capability. However, an optimized retrograde p-well consisting of a variable doping profile and depth as shallow as 0.7-0.8 µm results in much reduced turn-off losses with excellent short-circuit capability. Shallow implants are desirable to lower the development cost and processing challenges. The retrograde p-well is therefore highly promising for the development of >10 kV class of SiC IGBTs.

Sign in / Sign up

Export Citation Format

Share Document