Optimization of base doping profile for minimum transit time in bipolar transistors

1997 21st International Conference on Microelectronics. Proceedings ◽

10.1109/icmel.1997.625267 ◽

2002 ◽

Author(s):

P.G. Rinaldi ◽

N.F. Rinaldi

Keyword(s):

Transit Time ◽

Bipolar Transistors ◽

Doping Profile ◽

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Base transit time of submicron bipolar transistors including nonuniform base doping profile and high current effects

10.1109/edms.1994.863875 ◽

2005 ◽

Author(s):

J.J. Liou ◽

C.S. Ho

Keyword(s):

Transit Time ◽

Bipolar Transistors ◽

Doping Profile ◽

High Current ◽

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Base transit time of submicron bipolar transistors including nonuniform base doping profile and high current effects

10.1109/edms.1994.771360 ◽

2005 ◽

Author(s):

J.J. Liou ◽

C.S. Ho

Keyword(s):

Transit Time ◽

Bipolar Transistors ◽

Doping Profile ◽

High Current ◽

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Analytical modelling of base transit time and early voltage of InP/InGaAs Heterojunction Bipolar Transistor for nonuniform base doping profile

IEEE Technology Students' Symposium ◽

10.1109/techsym.2011.5783823 ◽

2011 ◽

Author(s):

S Chowdhury ◽

S Basu

Keyword(s):

Transit Time ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Analytical Modelling ◽

Doping Profile ◽

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Optimum base doping profile for minimum base transit time

IEEE Transactions on Electron Devices ◽

10.1109/16.83740 ◽

1991 ◽

Vol 38 (9) ◽

pp. 2128-2133 ◽

Author(s):

K. Suzuki

Keyword(s):

Transit Time ◽

Doping Profile ◽

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Base Doping Profile Engineering for High-Performance SiGe PNP Heterojunction Bipolar Transistors

High-Speed and Lower Power Technologies ◽

10.1201/9781351242295-4 ◽

2018 ◽

pp. 58-124

Author(s):

Guangrui (Maggie) Xia

Keyword(s):

Heterojunction Bipolar Transistors ◽

High Performance ◽

Bipolar Transistors ◽

Doping Profile ◽

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Base doping profile effect in SiGe heterojunction bipolar transistors

2004 IEEE International Conference on Semiconductor Electronics ◽

10.1109/smelec.2004.1620848 ◽

2004 ◽

Author(s):

G.M. Khanduri ◽

B.S. Panwar

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Doping Profile ◽

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Optimum base-doping profile for minimum base transit time considering velocity saturation at base-collector junction and dependence of mobility and bandgap narrowing on doping concentration

IEEE Transactions on Electron Devices ◽

10.1109/16.944202 ◽

2001 ◽

Vol 48 (9) ◽

pp. 2102-2107 ◽

Author(s):

K. Suzuki

Keyword(s):

Transit Time ◽

Doping Concentration ◽

Doping Profile ◽

Velocity Saturation ◽

Bandgap Narrowing ◽

Collector Junction ◽

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Base transit time of shallow-base bipolar transistors considering velocity saturation at base-collector junction

IEEE Transactions on Electron Devices ◽

10.1109/16.123487 ◽

1992 ◽

Vol 39 (3) ◽

pp. 623-628 ◽

Author(s):

K. Suzuki ◽

N. Nakayama

Keyword(s):

Transit Time ◽

Bipolar Transistors ◽

Velocity Saturation ◽

Collector Junction

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Sidewall effects on maximum cutoff frequency and forward transit time in downscaled bipolar transistors

Solid-State Electronics ◽

10.1016/0038-1101(94)90220-8 ◽

1994 ◽

Vol 37 (10) ◽

pp. 1731-1737 ◽

Author(s):

Niccoló Rinaldi

Keyword(s):

Transit Time ◽

Cutoff Frequency ◽

Bipolar Transistors ◽

Sidewall Effects

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On the iterative schemes to obtain base doping profiles for reducing base transit time in a bipolar transistor

IEEE Transactions on Electron Devices ◽

10.1109/16.925251 ◽

2001 ◽

Vol 48 (6) ◽

pp. 1222-1224 ◽

Author(s):

M. Jagadesh Kumar ◽

V.S. Patri

Keyword(s):

Transit Time ◽

Bipolar Transistor ◽

Iterative Schemes ◽

Doping Profiles ◽

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