Base transit time of submicron bipolar transistors including nonuniform base doping profile and high current effects

Mapping Intimacies ◽

10.1109/edms.1994.863875 ◽

2005 ◽

Author(s):

J.J. Liou ◽

C.S. Ho

Keyword(s):

Transit Time ◽

Bipolar Transistors ◽

Doping Profile ◽

High Current ◽

Download Full-text

Base transit time of submicron bipolar transistors including nonuniform base doping profile and high current effects

10.1109/edms.1994.771360 ◽

2005 ◽

Author(s):

J.J. Liou ◽

C.S. Ho

Keyword(s):

Transit Time ◽

Bipolar Transistors ◽

Doping Profile ◽

High Current ◽

Download Full-text

Optimization of base doping profile for minimum transit time in bipolar transistors

1997 21st International Conference on Microelectronics. Proceedings ◽

10.1109/icmel.1997.625267 ◽

2002 ◽

Author(s):

P.G. Rinaldi ◽

N.F. Rinaldi

Keyword(s):

Transit Time ◽

Bipolar Transistors ◽

Doping Profile ◽

Download Full-text

Analytical modelling of base transit time and early voltage of InP/InGaAs Heterojunction Bipolar Transistor for nonuniform base doping profile

IEEE Technology Students' Symposium ◽

10.1109/techsym.2011.5783823 ◽

2011 ◽

Author(s):

S Chowdhury ◽

S Basu

Keyword(s):

Transit Time ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Analytical Modelling ◽

Doping Profile ◽

Download Full-text

Optimum base doping profile for minimum base transit time

IEEE Transactions on Electron Devices ◽

10.1109/16.83740 ◽

1991 ◽

Vol 38 (9) ◽

pp. 2128-2133 ◽

Author(s):

K. Suzuki

Keyword(s):

Transit Time ◽

Doping Profile ◽

Download Full-text

Improved modeling for transit time and excess phase delay of advanced bipolar transistors at high current densities

Proceedings of the 44th IEEE 2001 Midwest Symposium on Circuits and Systems. MWSCAS 2001 (Cat. No.01CH37257) ◽

10.1109/mwscas.2001.986319 ◽

2002 ◽

Author(s):

Seonghearn Lee

Keyword(s):

Transit Time ◽

Bipolar Transistors ◽

Phase Delay ◽

High Current ◽

Current Densities ◽

Download Full-text

Base Doping Profile Engineering for High-Performance SiGe PNP Heterojunction Bipolar Transistors

High-Speed and Lower Power Technologies ◽

10.1201/9781351242295-4 ◽

2018 ◽

pp. 58-124

Author(s):

Guangrui (Maggie) Xia

Keyword(s):

Heterojunction Bipolar Transistors ◽

High Performance ◽

Bipolar Transistors ◽

Doping Profile ◽

Download Full-text

Base doping profile effect in SiGe heterojunction bipolar transistors

2004 IEEE International Conference on Semiconductor Electronics ◽

10.1109/smelec.2004.1620848 ◽

2004 ◽

Author(s):

G.M. Khanduri ◽

B.S. Panwar

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Doping Profile ◽

Download Full-text

Optimum base-doping profile for minimum base transit time considering velocity saturation at base-collector junction and dependence of mobility and bandgap narrowing on doping concentration

IEEE Transactions on Electron Devices ◽

10.1109/16.944202 ◽

2001 ◽

Vol 48 (9) ◽

pp. 2102-2107 ◽

Author(s):

K. Suzuki

Keyword(s):

Transit Time ◽

Doping Concentration ◽

Doping Profile ◽

Velocity Saturation ◽

Bandgap Narrowing ◽

Collector Junction ◽

Download Full-text

Base transit time of shallow-base bipolar transistors considering velocity saturation at base-collector junction

IEEE Transactions on Electron Devices ◽

10.1109/16.123487 ◽

1992 ◽

Vol 39 (3) ◽

pp. 623-628 ◽

Author(s):

K. Suzuki ◽

N. Nakayama

Keyword(s):

Transit Time ◽

Bipolar Transistors ◽

Velocity Saturation ◽

Collector Junction

Download Full-text

High-current-gain submicrometer InGaAs/InP heterostructure bipolar transistors

IEEE Electron Device Letters ◽

10.1109/55.17832 ◽

1988 ◽

Vol 9 (10) ◽

pp. 524-526 ◽

Author(s):

R.N. Nottenburg ◽

Y.-K. Chen ◽

M.B. Panish ◽

R. Hamm ◽

D.A. Humphrey

Keyword(s):

Bipolar Transistors ◽

Current Gain ◽

Download Full-text