Thermal plasma deposition of nanostructured films

1999 ◽  
Vol 27 (1) ◽  
pp. 46-47 ◽  
Author(s):  
A. Neuman ◽  
J. Blum ◽  
N. Tymiak ◽  
Z. Wong ◽  
N.P. Rao ◽  
...  
1999 ◽  
Vol 63 (1) ◽  
pp. 62-67 ◽  
Author(s):  
Shingo Nagata ◽  
Naoki Wakiya ◽  
Kazuo Shinozaki ◽  
Yoshio Masuda ◽  
Nobuyasu Mizutani

1995 ◽  
pp. 337-340
Author(s):  
Hisataka Yakabe ◽  
Atsusi Kume ◽  
Jian-Guo Wen ◽  
Yuh Shiohara ◽  
Naoki Koshizuka

1994 ◽  
Vol 231 (3-4) ◽  
pp. 330-334 ◽  
Author(s):  
H. Yakabe ◽  
J.G. Wen ◽  
A. Kume ◽  
Y. Shiohara ◽  
N. Koshizuka ◽  
...  

2002 ◽  
Vol 715 ◽  
Author(s):  
M. Creatore ◽  
M.F.A.M. van Hest ◽  
J. Benedikt ◽  
M.C.M. van de Sanden

AbstractIn this paper we report on the use of the expanding thermal plasma (ETP) technique for the deposition of carbon-free SiO2 films by means of hexamethyldisiloxane (HMDSO)/oxygen mixtures, at a growth rate of 8-10 nm/s. Information concerning the film chemical properties and refractive index/growth rate have been obtained by means of FTIR measurements and in situ single wavelength ellipsometry, respectively. Because of its geometry, the ETP configuration has proven its suitability for studies concerning the fragmentation paths of the HMDSO molecule and the reactions occurring in the plasma phase. In this framework, very recent results obtained by coupling the SiO2 film-deposition set up with a very sensitive, high spectral resolution- absorption technique, Cavity Ring Down Spectroscopy, are presented.


2001 ◽  
Vol 142-144 ◽  
pp. 265-271 ◽  
Author(s):  
J. Heberlein ◽  
O. Postel ◽  
S. Girshick ◽  
P. McMurry ◽  
W. Gerberich ◽  
...  

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