Amorphous-silicon thin-film transistor with liquid phase deposition of silicon dioxide gate insulator

1999 ◽  
Vol 20 (3) ◽  
pp. 138-139 ◽  
Author(s):  
Jiun-Lin Yeh ◽  
Si-Chen Lee
1999 ◽  
Vol 558 ◽  
Author(s):  
J.Y. Nahm ◽  
J.H. Lan ◽  
J. Kanicki

ABSTRACTA high-voltage hydrogenated amorphous silicon thin film transistor (H-V a-Si:H TFT) with thick double layer gate insulator (∼0.95 μm) has been developed for reflective active-matrix cholesteric liquid crystal displays. The double layer gate insulator consists of 0.85 and 0.10 μm thick benzocyclobutene and hydrogenated amorphous silicon nitride, respectively. This HV a-Si:H TFT operates at the gate-tosource and drain-to-source biases up to 100V without any serious leakage current degradation and device breakdown.


2004 ◽  
Vol 25 (3) ◽  
pp. 132-134 ◽  
Author(s):  
S.H. Won ◽  
J.H. Hur ◽  
C.B. Lee ◽  
H.C. Nam ◽  
J.K. Chung ◽  
...  

1987 ◽  
Vol 62 (5) ◽  
pp. 2129-2135 ◽  
Author(s):  
Kouichi Hiranaka ◽  
Tetsuzo Yoshimura ◽  
Tadahisa Yamaguchi

2000 ◽  
Vol 21 (1) ◽  
pp. 18-20 ◽  
Author(s):  
Young Jin Choi ◽  
Won Kyu Kwak ◽  
Kyu Sik Cho ◽  
Sung Ki Kim ◽  
Jin Jang

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